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參數(shù)資料
| 型號(hào)： | M25PX32-VMW6E |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 11/63頁 |
| 文件大?。?/td> | 394K |
| 代理商： | M25PX32-VMW6E |
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M25PX32
SPI modes
11/63
3
SPI modes
These devices can be driven by a microcontroller with its SPI peripheral running in either of
the two following modes:
CPOL=0, CPHA=0
CPOL=1, CPHA=1
●
●
For these two modes, input data is latched in on the rising edge of Serial Clock (C), and
output data is available from the falling edge of Serial Clock (C).
The difference between the two modes, as shown in
Figure 5
, is the clock polarity when the
bus master is in Standby mode and not transferring data:
C remains at 0 for (CPOL=0, CPHA=0)
C remains at 1 for (CPOL=1, CPHA=1)
●
●
Figure 4.
Bus Master and memory devices on the SPI bus
1.
Figure 4
shows an example of three devices connected to an MCU, on an SPI bus. Only one
device is selected at a time, so only one device drives the Serial Data output (DQ1) line at a
time, the other devices are high impedance. Resistors R (represented in
Figure 4
) ensure
that the M25PX32 is not selected if the Bus Master leaves the S line in the high impedance
state. As the Bus Master may enter a state where all inputs/outputs are in high impedance
at the same time (for example, when the Bus Master is reset), the clock line (C) must be
connected to an external pull-down resistor so that, when all inputs/outputs become high
impedance, the S line is pulled High while the C line is pulled Low (thus ensuring that S and
C do not become High at the same time, and so, that the t
SHCH
requirement is met). The
typical value of R is 100 k
, assuming that the time constant R*C
p
(C
p
= parasitic
capacitance of the bus line) is shorter than the time during which the Bus Master leaves the
SPI bus in high impedance.
The Write Protect (W) and Hold (HOLD) signals should be driven, High or Low as appropriate.
AI13725b
SPI Bus Master
SPI memory
device
SDO
SDI
SCK
C
DQ1DQ0
S
SPI memory
device
C
DQ1 DQ0
S
SPI memory
device
C
DQ1DQ0
S
CS3
CS2 CS1
SPI interface with
(CPOL, CPHA) =
(0, 0) or (1, 1)
W
HOLD
HOLD
W
HOLD
R
R
R
V
CC
V
CC
V
CC
V
CC
V
SS
V
SS
V
SS
V
SS
R
W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PX32-VMW6F | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PX32-VMF6E | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PX32-VMF6F | 4 Mbit Uniform Sector, Serial Flash Memory |
| M27128A | NMOS 128K 16K x 8 UV EPROM |
| M27128A-20F1 | NMOS 128K 16K x 8 UV EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PX32-VMW6EBA | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays |
| M25PX32-VMW6F | 功能描述:IC FLASH 32MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| M25PX32-VMW6FBA | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25PX32-VMW6Y | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
| M25PX32-VZM6E | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 32MBIT 75MHZ 24TBGA |
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