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參數(shù)資料
| 型號： | M25PX32-VMW6E |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 36/63頁 |
| 文件大?。?/td> | 394K |
| 代理商： | M25PX32-VMW6E |
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Instructions
M25PX32
36/63
6.10
Read OTP (ROTP)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
OTP (ROTP) instruction is followed by a 3-byte address (A23- A0) and a dummy byte. Each
bit is latched in on the rising edge of Serial Clock (C).
Then the memory contents at that address are shifted out on Serial Data output (DQ1).
Each bit is shifted out at the maximum frequency, f
C
max, on the falling edge of Serial Clock
(C). The instruction sequence is shown in
Figure 17
.
The address is automatically incremented to the next higher address after each byte of data
is shifted out.
There is no rollover mechanism with the Read OTP (ROTP) instruction. This means that the
Read OTP (ROTP) instruction must be sent with a maximum of 65 bytes to read, since once
the 65
th
byte has been read, the same (65
th
) byte keeps being read on the DQ1 pin.
The Read OTP (ROTP) instruction is terminated by driving Chip Select (S) High. Chip Select
(S) can be driven High at any time during data output. Any Read OTP (ROTP) instruction
issued while an Erase, Program or Write cycle is in progress, is rejected without having any
effect on the cycle that is in progress.
Figure 17.
Read OTP (ROTP) instruction and data-out sequence
1.
2.
A23 to A7 are Don't care.
1
≤
n
≤
65.
C
DQ0
AI13573
S
DQ1
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31
22 21
3
2
1
0
High Impedance
Instruction
24-bit address
0
C
DQ0
S
DQ1
32 33 34
36 37 38 39 40 41 42 43 44 45 46
7
6
5
4
3
2
0
1
DATA OUT 1
Dummy byte
MSB
7
6
5
4
3
2
1
0
DATA OUT n
MSB
MSB
7
47
7
6
5
4
3
2
0
1
35
相關(guān)PDF資料 |
PDF描述 |
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| M25PX32-VMW6F | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PX32-VMF6E | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PX32-VMF6F | 4 Mbit Uniform Sector, Serial Flash Memory |
| M27128A | NMOS 128K 16K x 8 UV EPROM |
| M27128A-20F1 | NMOS 128K 16K x 8 UV EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PX32-VMW6EBA | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays |
| M25PX32-VMW6F | 功能描述:IC FLASH 32MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| M25PX32-VMW6FBA | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25PX32-VMW6Y | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
| M25PX32-VZM6E | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 32MBIT 75MHZ 24TBGA |
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