參數(shù)資料
型號： M25PX32-VMW6E
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁數(shù)： 13/63頁
文件大小： 394K
代理商： M25PX32-VMW6E
M25PX32
Operating features
13/63
4
Operating features
4.1
Page programming
To program one data byte, two instructions are required: Write Enable (WREN), which is one
byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This is
followed by the internal Program cycle (of duration t
PP
).
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be
programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive
addresses on the same page of memory.
For optimized timings, it is recommended to use the Page Program (PP) instruction to
program all consecutive targeted bytes in a single sequence versus using several Page
Program (PP) sequences with each containing only a few bytes (see
Page Program (PP)
and
Table 17: AC characteristics
).
4.2
Dual Input Fast Program
The Dual Input Fast Program (DIFP) instruction makes it possible to program up to 256
bytes using two input pins at the same time (by changing bits from 1 to 0).
For optimized timings, it is recommended to use the Dual Input Fast Program (DIFP)
instruction to program all consecutive targeted bytes in a single sequence rather to using
several Dual Input Fast Program (DIFP) sequences each containing only a few bytes (see
Section 6.12: Dual Input Fast Program (DIFP)
).
4.3
Subsector Erase, Sector Erase and Bulk Erase
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be
applied, the bytes of memory need to have been erased to all 1s (FFh). This can be
achieved either a subsector at a time, using the Subsector Erase (SSE) instruction, a sector
at a time, using the Sector Erase (SE) instruction, or throughout the entire memory, using
the Bulk Erase (BE) instruction. This starts an internal Erase cycle (of duration t
SSE
, t
SE
or
t
BE
).
The Erase instruction must be preceded by a Write Enable (WREN) instruction.
4.4
Polling during a Write, Program or Erase cycle
A further improvement in the time to Write Status Register (WRSR), Program OTP (POTP),
Program (PP), Dual Input Fast Program (DIFP) or Erase (SSE, SE or BE) can be achieved
by not waiting for the worst case delay (t
W
, t
PP
, t
SSE
, t
SE
, or t
BE
). The Write In Progress
(WIP) bit is provided in the Status Register so that the application program can monitor its
value, polling it to establish when the previous Write cycle, Program cycle or Erase cycle is
complete.
相關(guān)PDF資料
PDF描述
M25PX32-VMW6F 4 Mbit Uniform Sector, Serial Flash Memory
M25PX32-VMF6E 4 Mbit Uniform Sector, Serial Flash Memory
M25PX32-VMF6F 4 Mbit Uniform Sector, Serial Flash Memory
M27128A NMOS 128K 16K x 8 UV EPROM
M27128A-20F1 NMOS 128K 16K x 8 UV EPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PX32-VMW6EBA 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays
M25PX32-VMW6F 功能描述:IC FLASH 32MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
M25PX32-VMW6FBA 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel
M25PX32-VMW6Y 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays
M25PX32-VZM6E 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 32MBIT 75MHZ 24TBGA
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*