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參數(shù)資料
| 型號： | M12L16161A-7BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA60 |
| 封裝： | 6.40 X 10.10 MM, 0.65 MM PITCH, LEAD FREE, VFBGA-60 |
| 文件頁數(shù)： | 5/30頁 |
| 文件大?。?/td> | 714K |
| 代理商： | M12L16161A-7BG |
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ES MT
M12L16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2005
Revision
:
2.4
5/30
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
C
°
V
IH
(min)/V
IL
(max)=2.0V/0.8V)
Version
Parameter
Symbol
Test Condition
CAS
Latency
-5
-7
Unit Note
Operating Current
(One Bank Active)
I
CC1
Burst Length = 1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0mA
130
100
mA
1
I
CC2P
CKE
≤
V
IL
(max), t
CC
=15ns
2
mA
Precharge Standby
Current in power-down
mode
I
CC2PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
2
I
CC2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
25
mA
Precharge Standby
Current in non
power-down mode
I
CC2NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
10
mA
I
CC3P
CKE
≤
V
IL
(max), t
CC
=15ns
10
Active Standby Current
in power-down mode
I
CC3PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
10
mA
I
CC3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
25
mA
Active Standby Current
in non power-down
mode
(One Bank Active)
I
CC3NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
10
mA
3
150
120
mA
1
Operating Current
(Burst Mode)
I
CC4
I
OL
= 0Ma, Page Burst
All Band Activated, t
CCD
= t
CCD
(min)
2
150
120
Refresh Current
I
CC5
t
RC
≥
t
RC
(min)
150
120
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
1
mA
Note:
1.Measured with outputs open. Addresses are changed only one time during t
CC
(min).
2.Refresh period is 32ms. Addresses are changed only one time during t
CC
(min).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M12L16161A-7TG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12L2561616A | 4M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L2561616A-6BG | 4M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L2561616A-6TG | 4M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L2561616A-7BG | 4M x 16 Bit x 4 Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12L16161A-7BIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-7T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-7TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-7TG2Q | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks |
| M12L16161A-7TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
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