參數(shù)資料
型號(hào)： M12L16161A-7BG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： DRAM
英文描述： 512K x 16Bit x 2Banks Synchronous DRAM
中文描述： 1M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA60
封裝： 6.40 X 10.10 MM, 0.65 MM PITCH, LEAD FREE, VFBGA-60
文件頁(yè)數(shù)： 16/30頁(yè)
文件大?。?/td> 714K
代理商： M12L16161A-7BG
ES MT
Page Read & Write Cycle at Same Bank @ Burst Length=4
M12L16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2005
Revision
:
2.4
16/30
*Note :
1.To write data before burst read ends, DQM should be asserted three cycle prior to write command to avoid bus
contention.
2.Row precharge will interrupt writing. Last data input, t
RDL
before Row precharge, will be written.
3.DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst.
Input data after Row precharge cycle will be masked internally.
CLOCK
CKE
CS
RAS
CAS
BA
ADDR
A10/AP
CL=2
CL=3
WE
DQM
HIGH
t
RCD
*Note2
Ra
Ca0
Cb0
Cc0
Cd0
Ra
Qa0
Qa1
Qb0
Qb1
Qb2
Dc0
Dc1
Dd0
Dd1
Qa0
Qa1
Qb0
Qb1
Dc0
Dc1
Dd0
Dd2
t
CDL
*Note1
Row Active
(A-Bank)
Read
(A-Bank)
Read
(A-Bank)
Write
(A-Bank)
Write
(A-Bank)
Precharge
(A-Bank)
: Don't care
DQ
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
t
RDL
*Note3
相關(guān)PDF資料
PDF描述
M12L16161A-7TG 512K x 16Bit x 2Banks Synchronous DRAM
M12L2561616A 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-6BG 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-6TG 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-7BG 4M x 16 Bit x 4 Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L16161A-7BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7TG2Q 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks
M12L16161A-7TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
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