參數(shù)資料
型號: M12L16161A-7BG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 512K x 16Bit x 2Banks Synchronous DRAM
中文描述: 1M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA60
封裝: 6.40 X 10.10 MM, 0.65 MM PITCH, LEAD FREE, VFBGA-60
文件頁數(shù): 20/30頁
文件大?。?/td> 714K
代理商: M12L16161A-7BG
ES MT
Read & Write Cycle with auto Precharge @ Burst Length =4
M12L16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2005
Revision
:
2.4
20/30
*Note: 1.t
CDL
Should be controlled to meet minimum t
RAS
before internal precharge start
(In the case of Burst Length=1 & 2 and BRSW mode)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
C L O C K
C K E
C A S
A D D R
W E
DQ
DQ M
A10/AP
BA
CL= 2
CL=3
Row Active
( A - Bank )
Row Active
( B - Bank )
Read with
Auto Precharge
( A - Bank )
Auto Precharge
Start Point
(B- Bank)
: D o n ' t C a r e
Qa1
Qa2
Qa3
Db1
Db2
Db3
Db0
Qa0
Ra
Cb
Ra
Ca
Rb
Rb
Qa1
Qa2
Qa3
Db1
Db2
Db3
Db0
Qa0
W rite with
Auto Precharge
(B-Bank)
HIGH
Auto Precharge
Start Point
( A - Bank)
CS
RAS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L16161A-7BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7TG2Q 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks
M12L16161A-7TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM