參數(shù)資料
型號(hào): M12L16161A-7BG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 512K x 16Bit x 2Banks Synchronous DRAM
中文描述: 1M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA60
封裝: 6.40 X 10.10 MM, 0.65 MM PITCH, LEAD FREE, VFBGA-60
文件頁數(shù): 13/30頁
文件大小: 714K
代理商: M12L16161A-7BG
ES MT
M12L16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2005
Revision
:
2.4
13/30
*Note:
1. All inputs expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by BA.
BA
Active & Read/Write
0
Bank A
1
Bank B
3.Enable and disable auto precharge function are controlled by A10/AP in read/write command.
A10/AP
BA
Operation
0
Disable auto precharge, leave bank A active at end of burst.
0
1
Disable auto precharge, leave bank B active at end of burst.
0
Enable auto precharge, precharge bank A at end of burst.
1
1
Enable auto precharge, precharge bank B at end of burst.
4.A10/AP and BA control bank precharge when precharge command is asserted.
A10/AP
BA
precharge
0
0
Bank A
0
1
Bank B
1
X
Both Banks
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L16161A-7BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7TG2Q 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks
M12L16161A-7TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM