參數(shù)資料
型號(hào)： M12L16161A-7BG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： DRAM
英文描述： 512K x 16Bit x 2Banks Synchronous DRAM
中文描述： 1M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA60
封裝： 6.40 X 10.10 MM, 0.65 MM PITCH, LEAD FREE, VFBGA-60
文件頁(yè)數(shù)： 2/30頁(yè)
文件大?。?/td> 714K
代理商： M12L16161A-7BG
ES MT
SDRAM
FEATURES
z
JEDEC standard 3.3V power supply
z
LVTTL compatible with multiplexed address
z
Dual banks operation
z
MRS cycle with address key programs
-
CAS Latency (2 & 3 )
-
Burst Length (1, 2, 4, 8 & full page)
-
Burst Type (Sequential & Interleave)
z
All inputs are sampled at the positive going edge of the
system clock
z
Burst Read Single-bit Write operation
z
DQM for masking
z
Auto & self refresh
z
32ms refresh period (2K cycle)
M12L16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2005
Revision
:
2.4
2/30
512K x 16Bit x 2Banks
Synchronous DRAM
GENERAL DESCRIPTION
The M12L16161A is 16,777,216 bits synchronous high
data rate Dynamic RAM organized as 2 x 524,288 words by
16 bits, fabricated with high performance CMOS technology.
Synchronous design allows precise cycle control with the
use of system clock I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high
performance memory system applications.
ORDERING INFORMATION
Part NO.
MAX Freq.
PACKAGE COMMENTS
M12L16161A-5TG
M12L16161A-7TG
M12L16161A-7BG
200MHz
143MHz
143MHz
TSOP(II)
TSOP(II)
VFBGA
Pb-free
Pb-free
Pb-free
PIN CONFIGURATION (TOP VIEW)
V
DD
DQ0
DQ1
V
SSQ
DQ2
DQ3
V
DDQ
DQ4
DQ5
V
SSQ
DQ6
DQ7
V
DDQ
LDQM
WE
CAS
RAS
CS
BA
A10/AP
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
V
SS
DQ15
DQ14
V
SSQ
DQ13
DQ12
V
DDQ
DQ11
DQ10
V
SSQ
DQ9
DQ8
V
DDQ
N.C/RFU
UDQM
CLK
CKE
N.C
A9
A8
A7
A6
A5
A4
V
SS
50PIN TSOP(II)
(400mil x 825mil)
(0.8 mm PIN PITCH)
VSS
DQ15
DQ14
VSSQ
DQ13
VDDQ
DQ12
DQ11
DQ10
VSSQ
DQ9
VDDQ
DQ8
NC
NC
NC
NC
UDQM
NC
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
VSS
A4
DQ0
VDD
VDDQ
DQ1
VSSQ
DQ2
DQ4
DQ3
VDDQ
DQ5
VSSQ
DQ6
NC
DQ7
NC
NC
LDQM
WE
CAS
NC
CS
NC
NC
A0
A10
A2
A1
A3
VDD
1
2
3
4
5
6
7
RAS
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
60 Ball VFBGA
(6.4x10.1mm)
(0.65mm ball pitch)
相關(guān)PDF資料
PDF描述
M12L16161A-7TG 512K x 16Bit x 2Banks Synchronous DRAM
M12L2561616A 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-6BG 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-6TG 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-7BG 4M x 16 Bit x 4 Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L16161A-7BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7TG2Q 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks
M12L16161A-7TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
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