參數(shù)資料
型號： L6566BTR
廠商： 意法半導(dǎo)體
英文描述： Multi-mode controller for SMPS
中文描述： 多模式開關(guān)電源控制器
文件頁數(shù)： 15/51頁
文件大?。?/td> 401K
代理商： L6566BTR
L6566B
Electrical characteristics
15/51
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
Zero current detector/ overvoltage protection
V
ZCDH
Upper clamp voltage
I
ZCD
= 3 mA
5.4
5.7
6
V
V
ZCDL
Lower clamp voltage
I
ZCD
= - 3 mA
-0.4
V
V
ZCDA
Arming voltage
(1)
positive-going edge
85
100
115
mV
V
ZCDT
Triggering voltage
(1)
negative-going edge
30
50
70
mV
I
ZCD
Internal pull-up
V
COMP
< V
COMPSH
-1
μA
V
ZCD
< 2 V, V
COMP
= V
COMPHI
-130
-100
-70
I
ZCDsrc
Source current capability
V
ZCD
= V
ZCDL
-3
mA
I
ZCDsnk
Sink current capability
V
ZCD
= V
ZCDH
3
mA
T
BLANK1
Turn-on inhibit time
After gate-drive going low
2.5
μs
V
ZCDth
OVP threshold
4.85
5
5.15
V
T
BLANK2
OVP strobe delay
After gate-drive going low
2
μs
Latched shutdown function
I
OTP
Input bias current
V
DIS
= 0 to V
OTP
-1
μA
V
OTP
Disable threshold
(1)
4.32
4.5
4.68
V
Thermal shutdown
Vth
Shutdown threshold
160
°
C
Hys
Hysteresis
50
°
C
External oscillator (frequency modulation)
f
FMOD
Oscillation frequency
C
MOD
= 0.1 μF
600
750
900
Hz
---
Usable frequency range
0.05
15
kHz
V
pk
Peak voltage
(3)
1.5
V
V
vy
Valley voltage
0.5
V
I
FMOD
Charge/discharge current
150
μA
Mode selection / slope compensation
MODE
th
Threshold for QR operation
3
V
SC
pk
Ramp peak
(MODE/SC = Open)
R
S-COMP
= 3 k
to GND, GD pin
high, V
COMP
= 5 V
1.7
V
SC
vy
Ramp starting value
(MODE/SC = Open)
R
S-COMP
= 3 k
to GND,
GD pin high
0.3
V
Ramp voltage
(MODE/SC = Open)
GD pin low
0
V
Source capability
(MODE/SC = Open)
V
S-COMP
=
V
S-COMPpk
0.8
mA
Table 5. Electrical characteristics (continued)
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