- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373155 > KM418RD4AD (SAMSUNG SEMICONDUCTOR CO. LTD.) 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM PDF資料下載
參數(shù)資料
| 型號(hào)： | KM418RD4AD |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| 中文描述： | 128/144Mbit RDRAM的256 × 16/18位× 2 * 16屬銀行直接RDRAMTM |
| 文件頁(yè)數(shù)： | 37/64頁(yè) |
| 文件大小： | 4052K |
| 代理商： | KM418RD4AD |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)當(dāng)前第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)
Page 34
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM
Rev. 1.01 Oct. 1999
Figure 32: REFB Register
Figure 33: CCA Register
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
0
0
0
0
REFB4..REFB0
Read/write register.
Reset value is zero (from SETR/CLRR).
Refresh Bank register.
REFB4..REFB0 is the bank that will be refreshed next
during self-refresh. REFB4..0 is incremented after each
self-refresh activate and precharge operation pair.
Control Register: REFB
Address: 041
16
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
0
CCA6..CCA0
ASYMA
0
Read/write register.
Reset value is zero (SETR/CLRR or SIO Reset).
CCA6..CCA0 - Current Control A. Controls the I
OL
output current for the DQA8..DQA0 pins.
ASYMA0 control the asymmetry of the V
OL
/V
OH
voltage swing about the V
REF
reference voltage for the
DQA8..0 pins.
Control Register: CCA
Address: 043
16
Figure 34: REFR Register
Figure 35: CCB Register
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
REFR8..REFR0
Read/write register.
Reset value is zero (from SETR/CLRR).
Refresh Row register.
REFR8..REFR0 is the row that will be refreshed next
by the REFA command or by self-refresh. REFR8..0 is
incremented when BR4..0=11111 for the REFA
command. REFR8..0 is incremented when
REFB4..0=11111 for self-refresh.
Control Register: REFR
Address: 042
16
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
0
CCB6.CCB0
ASYMB
0
Read/write register.
Reset value is zero (SETR/CLRR or SIO Reset).
CCB6..CCB0 - Current Control B. Controls the I
OL
output current for the DQB8..DQB0 pins.
ASYMB0 control the asymmetry of the V
OL
/V
OH
voltage swing about the V
REF
reference voltage for the
DQB8..0 pins.
Control Register: CCB
Address: 044
16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM418RD4C | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM418RD4D | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM416RD16AD | CAP ELECT 47UF 100V TG SMD |
| KM416RD16C | 15VPP 74DB 2 TERM CERAM BUZZER |
| KM416RD16D | 15VPP 86DB 2 TERM CERAM BUZZER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM418RD4C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM418RD4D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM418RD8AC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM418RD8AC(D)-RG60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM418RD8AC(D)-RK70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。