參數(shù)資料
型號： KFH1G16Q2M-DIB6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY(54MHz)
中文描述： 閃存（54MHz之間）
文件頁數(shù)： 75/93頁
文件大小： 1219K
代理商： KFH1G16Q2M-DIB6
OneNAND512/OneNAND1GDDP
FLASH MEMORY
75
ABSOLUTE MAXIMUM RATINGS
NOTES
:
1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level should not fall to POR level(typ. 1.5V) .
Maximum DC voltage is Vcc+0.6V on input / output pins which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
KFG1216Q2M
KFH1G16Q2M
KFG1216D2M
KFH1G16D2M
KFG1216U2M
KFH1G16U2M
Voltage on any pin relative
to V
SS
Vcc
Vcc
-0.5 to + 2.45
-0.6 to + 4.6
-0.6 to + 4.6
V
All Pins
V
IN
-0.5 to + 2.45
-0.6 to + 4.6
-0.6 to + 4.6
Temperature Under Bias
Extended
T
bias
-30 to +125
-30 to +125
-30 to +125
°
C
Industrial
-
-
-40 to +125
Storage Temperature
T
stg
-65 to +150
-65 to +150
-65 to +150
°
C
Short Circuit Output Current
I
OS
5
5
5
mA
Operating Temperature
T
A
(Extended Temp.)
-30 to + 85
-30 to + 85
-
°
C
T
A
(Industrial Temp.)
-
-
-40 to + 85
RECOMMENDED OPERATING CONDITIONS
( Voltage reference to GND )
NOTES
:
1. The system power should reach 1.7V after POR triggering level(typ. 1.5V) within 400us.
2. Vcc-Core should reach the operating voltage level prior to Vcc-IO.
Parameter
Symbol
1.8V Device
2.65V Device
3.3V Device
Unit
Min
Typ.
Max
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
-Core/
V
CC
-IO
1.7
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
0
0
0
V
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