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參數(shù)資料
| 型號(hào)： | KFH1G16Q2M-DIB6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY(54MHz) |
| 中文描述： | 閃存（54MHz之間） |
| 文件頁(yè)數(shù)： | 5/93頁(yè) |
| 文件大小： | 1219K |
| 代理商： | KFH1G16Q2M-DIB6 |
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OneNAND512/OneNAND1GDDP
FLASH MEMORY
5
Document Title
OneNAND
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
1.3
1.4
Remark
Final
Draft Date
Dec. 16, 2004
Jun. 15, 2005
History
1. Deleted Manufacturer ID for ES
2. Excluded bit error case in Load operation
3. Revised tWEA value from max to min
4. Revised tRD1 typical value from 35us to 40us
5. Revised tRD2 typical value from 75us to 85us
6. Added technical note for OneNAND boot sequence
7. Revised Asycnchronous Read timing diagram for CE don’t care mode
8. Revised Asynchronous Write timing diagram for CE don’t care mode
9. Revised Load operation timing diagram for CE don’t care mode
1. Added Copyright Notice in the beginning
2. Corrected Errata
3. Updated Icc2, Icc4, Icc5, Icc6 and I
SB
4. Revised INT pin description
5. Changed default of Manufacturer ID Register with 00ECh
6. Removed "or erase case, refer to the table 3" from descriptions of WB, EB
7. Added OTP erase case NOTE
8. Revised case definitions of Interrupt Status Register
9. Added a NOTE to Command register
10. Added ECClogSector Information table
11. Removed ’data unit based data handling’ from description of Device
Operation
12. Revised description on Warm/Hot/NAND Flash Core Reset
13. Revised Warm Reset Timing
14. Revised description for 4-, 8-, 16-, 32-Word Linear Burst Mode
15. Revised OTP operation description
16. Restored earlier text for OTP Programming
17. Added supplemental explanation for ECC Operation
18. Replaced "read" with "load" in ECC bypass
19. Removed redundant sentance from ECC Bypass Operation
20. Added technical note for INT pin connection guide
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KFH1G16Q2M-DID | FLASH MEMORY |
| KFH1G16Q2M-DID5 | FLASH MEMORY(54MHz) |
| KFH1G16Q2M-DID6 | CONN RCPT .100 100POS DL R/A AU |
| KH102 | Analog IC |
| STH5000-200 | Industrial Control IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFH1G16Q2M-DID | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KFH1G16Q2M-DID5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH1G16Q2M-DID6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH1G16U2M-DEB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KFH1G16U2M-DEB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
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