參數(shù)資料
型號: KFH1G16Q2M-DIB6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(54MHz)
中文描述: 閃存(54MHz之間)
文件頁數(shù): 34/93頁
文件大?。?/td> 1219K
代理商: KFH1G16Q2M-DIB6
OneNAND512/OneNAND1GDDP
FLASH MEMORY
34
7.22 Controller Status Register (R): F240h, default=0000h
CB
(Controller Busy) : this bit shows the overall internal status of OneNAND
0=ready, 1=busy
FC
(Fault Check): this bit shows whether host loads data from NAND Flash array into locked BootRAM or programs/erases locked block of
NAND Flash array or put invalid command into the device.
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
CB
FC
RB
WB
EB
WRc
Reserv
ed(0)
Reserv
ed(0)
RSTB
Reserved(000000)
TO
(0)
FC
Fault Check Result
0
No fault
1
Fault
WRc
Current Sector/Page Program/CopyBack.
Program/Erase Result
0
Pass
1
Fail
WRc
(Current Sector/Page Write Result): this bit shows current sector/page Program/Copy Back Program/Erase result of flash memory.
TO
(Time Out): time out for load/program/copy back program/erase
0=no time out(fixed)
RB
(Read Busy) : this bit shows the Load operation status
0=ready(default), 1=busy
WB
(Write Busy) : this bit shows the Program operation status
0=ready(default), 1=busy
EB
(Erase Busy) : this bit shows the Erase operation status
0=ready(default), 1=busy
RSTB
(Reset Busy) : this bit shows the Reset operation status
0=ready(default), 1=busy
7.19 System Configuration 2 Register : F222h
: N/A
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