參數(shù)資料
型號： K9F1G08Q0A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 2/37頁
文件大?。?/td> 677K
代理商： K9F1G08Q0A
FLASH MEMORY
2
K9F1G08U0A
K9F1G08Q0A
GENERAL DESCRIPTION
Offered in 128Mx8bit the K9F1G08X0A is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-effective solution
for the solid state mass storage market. A program operation can be performed in typical 300
μ
s on the 2112-byte page and an erase
operation can be performed in typical 2ms on a 128K-byte block. Data in the data page can be read out at 50ns (30ns, K9F1G08U0A)
cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write
controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin-
ing of data. Even the write-intensive systems can take advantage of the K9F1G08X0A
′
s extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08X0A is an optimum solution for
large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
FEATURES
Voltage Supply
-1.8V device(K9F1G08Q0A): 1.70V~1.95V
-3.3V device(K9F1G08U0A): 2.7 V ~3.6 V
Organization
- Memory Cell Array : (128M + 4,096K)bit x 8bit
- Data Register : (2K + 64)bit x8bit
- Cache Register : (2K + 64)bit x8bit
Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
Page Read Operation
- Page Size : 2K-Byte
- Random Read : 25
μ
s(Max.)
- Serial Access : 30ns(Min.) : (K9F1G08U0A)
50ns(Min.) : (K9F1G08Q0A)
128M x 8 Bit NAND Flash Memory
Fast Write Cycle Time
- Program time : 300
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Cache Program Operation for High Performance Program
Intelligent Copy-Back Operation
Unique ID for Copyright Protection
Package :
- K9F1G08U0A-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1G08U0A-VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F1G08U0A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1G08U0A-FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1G08U0A-V,F(WSOPI ) is the same device as
K9F1G08U0A-Y,P(TSOP1) except package type.
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9F1G08Q0A
1.70 ~ 1.95V
X8
Only available in MCP
K9F1G08U0A-Y,P
2.7 ~ 3.6V
TSOP1
K9F1G08U0A-V,F
WSOP1
相關(guān)PDF資料
PDF描述
K9F1G08U0A FLASH MEMORY
K9F1G08Q0M-YIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-YCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-YCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M-YCB0 1Gb Gb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08Q0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G08Q0M-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
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