參數(shù)資料
型號： K9F1G08Q0A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 10/37頁
文件大?。?/td> 677K
代理商： K9F1G08Q0A
FLASH MEMORY
10
K9F1G08U0A
K9F1G08Q0A
CAPACITANCE
(
T
A
=25
°
C, V
CC
=1.8V/3.3V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
VALID BLOCK
NOTE
:
1. The
K9F1G08X0A
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase
or program factory-marked bad blocks
.
Refer to the attached technical notes for appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
cycles.
AC TEST CONDITION
(K9F1G08X0A-XCB0 :TA=0 to 70
°
C, K9F1G08X0A-XIB0:TA=-40 to 85
°
C
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
1004
-
1024
Blocks
K9F1G08Q0A : Vcc=1.70V~1.95V, K9F1G08U0A : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9F1G08Q0A
K9F1G08U0A
Input Pulse Levels
0V to Vcc
0V to Vcc
Input Rise and Fall Times
5ns
5ns
Input and Output Timing Levels
Vcc/2
Vcc/2
Output Load
1 TTL GATE and CL=30pF
1 TTL GATE and CL=50pF
MODE SELECTION
NOTE
: 1. X can be V
IL
or V
IH.
2. WP should be biased to CMOS high or CMOS low for standby.
CLE
ALE
CE
WE
RE
WP
Mode
H
L
L
H
X
Read Mode
Command Input
L
H
L
H
X
Address Input(4clock)
H
L
L
H
H
Write Mode
Command Input
L
H
L
H
H
Address Input(4clock)
L
L
L
H
H
Data Input
L
L
L
H
X
Data Output
X
X
X
X
H
X
During Read(Busy)
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
CC
(2)
Stand-by
相關(guān)PDF資料
PDF描述
K9F1G08U0A FLASH MEMORY
K9F1G08Q0M-YIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-YCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-YCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M-YCB0 1Gb Gb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08Q0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G08Q0M-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
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