參數(shù)資料
型號(hào): K8S5515ETC-SC1E0
元件分類: PROM
英文描述: 16M X 16 FLASH 1.8V PROM, 100 ns, PBGA44
封裝: 7.70 X 6.20 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-44
文件頁(yè)數(shù): 32/65頁(yè)
文件大小: 1196K
代理商: K8S5515ETC-SC1E0
- 38 -
K8S5615ETC
datasheet NOR FLASH MEMORY
Rev. 1.0
18.5 Erase/Program Performance
NOTE :
1)25
°C, VCC = 1.8V, 100,000 cycles, typical pattern.
2) System-level overhead is defined as the time required to execute the two or four bus cycle command necessary to program each word.
3) Chip Erase time & Accel. Chip Erase time for boot block part : K8S(54/55/56/57)15ET(B)C
4) Not 100% tested.
Parameter
Limits
Unit
Comments
Min.
Typ.
Max.
Block Erase Time
64 Kword
-
0.6
3.0
sec
Includes 00h programming
prior to erasure
16 Kword
-
0.3
1.5
Chip Erase Time (3)
-
154.2
771
Accelerated Block Erase Time
64 Kword
-
0.4
3.0
16 Kword
-
0.2
1.5
Accelerated Chip Erase Time (3)
-
103
515
Word Programming Time
-
80
550
μs / word
Excludes system level over-
head
32-word Buffer Programming Time (4)
-
2.8
14
Accelerated Word Programming Time
-
80
550
Accelerated 32-word Buffer Programming Time
-
1.4
7
Chip Buffer Programming Time
-
47
235
sec
Excludes system level over-
head
Accelerated Buffer Chip Programming Time
-
23.4
117
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