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參數(shù)資料
| 型號： | IXGA20N60B |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFAST IGBT(VCES為600V，VCE(sat)為1.7V的HiPerFAST絕緣柵雙極晶體管) |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IXGA20N60B |
1 - 4
2000 IXYS All rights reserved
98506B (07/99)
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
T
J
= 25°C to 150°C
= 25°C to 150°C; R
GE
= 1 M
600
600
V
V
V
GES
V
GEM
Continuous
Transient
±20
±30
V
V
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
C
T
C
T
C
V
= 15 V, T
= 125°C, R
= 22
Clamped inductive load, L = 100 H
= 25°C
= 90°C
= 25°C, 1 ms
40
20
80
A
A
A
I
= 40
@ 0.8 V
CES
A
P
C
T
C
= 25°C
150
W
T
J
T
JM
T
stg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
M
d
Mounting torque (TO-220)
M3
M3.5 0.55/5 Nm/lb.in.
0.45/4 Nm/lb.in.
Weight
TO-220
TO-263
4
2
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 250 A, V
CE
= V
GE
600
2.5
V
V
5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25°C
T
J
= 125°C
200
A
1
mA
I
GES
V
CE
= 0 V, V
GE
= ±20 V
±100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.7
2.0
V
Features
International standard packages
JEDEC TO-263 surface
mountable and JEDEC TO-220 AB
High frequency IGBT
High current handling capability
HiPerFAST
TM
HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Suitable for surface mounting
Very low switching losses for high
frequency applications
IXGA 20N60B
IXGP 20N60B
V
CES
I
C25
V
CE(sat)typ
t
fi
= 600
= 40
= 1.7
= 100 ns
V
A
V
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
G
E
C (TAB)
TO-263 AA (IXGA)
GCE
TO-220AB (IXGP)
HiPerFAST
TM
IGBT
IXYS reserves the right to change limits, test conditions, and dimensions.
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