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參數(shù)資料
| 型號(hào)： | IXGA7N60CD1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFAST IGBT with Diode(VCES為600V，VCE(sat)為2.0V的HiPerFAST絕緣柵雙極晶體管（帶二極管）) |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-263AA |
| 封裝： | TO-263AA, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 52K |
| 代理商： | IXGA7N60CD1 |
1 - 2
2000 IXYS All rights reserved
HiPerFAST
TM
IGBT
with Diode
Lightspeed
TM
Series
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
T
J
= 25°C to 150°C
= 25°C to 150°C; R
GE
= 1 M
600
600
V
V
V
GES
V
GEM
Continuous
Transient
±20
±30
V
V
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
C
T
C
T
C
V
= 15 V, T
= 125°C, R
= 22
Clamped inductive load, L = 300 H
= 25°C
= 90°C
= 25°C, 1 ms
14
7
30
A
A
A
I
= 14
@ 0.8 V
CES
A
P
C
T
C
= 25°C
54
W
T
J
T
JM
T
stg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
M
d
Mounting torque, (TO-220)
M3
M3.5
0.45/4Nm/lb.in.
0.55/5Nm/lb.in.
Weight
TO-220
TO-263
4
2
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 250 A, V
CE
= V
GE
600
2.5
V
V
5.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25°C
T
J
= 125°C
100
750
A
A
I
GES
V
CE
= 0 V, V
GE
= ±20 V
±100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.0
2.5
V
Features
International standard packages
JEDEC TO-263 surface
mountable and JEDEC TO-220 AB
High frequency IGBT
High current handling capability
HiPerFAST
TM
HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Suitable for surface mounting
Very low switching losses for high
frequency applications
V
CES
I
C25
V
CE(sat)typ
t
fi
= 600
= 14
= 2.0
= 45 ns
V
A
V
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Advanced Technical Information
G
E
C (TAB)
TO-263 AA (IXGA)
GCE
TO-220AB (IXGP)
98720 (05/01/2000)
IXGA 7N60CD1
IXGP 7N60CD1
IXYS reserves the right to change limits, test conditions, and dimensions.
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| IXGA8N100 | 功能描述:IGBT 晶體管 16 Amps 1000V 2.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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| IXGB16N60R2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 16A I(C) | SIP |
| IXGB16N60U3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 16A I(C) | SIP |
| IXGB200N60B3 | 功能描述:IGBT 晶體管 GenX3 600V IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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