- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383196 > IXGA8N100 (IXYS CORP) IXGA8N100 PDF資料下載
參數(shù)資料
| 型號： | IXGA8N100 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IXGA8N100 |
| 中文描述： | 16 A, 1000 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 102K |
| 代理商： | IXGA8N100 |
1 - 2
2000 IXYS All rights reserved
IGBT
GCE
TO-220AB (IXGP)
V
CES
I
C25
V
CE(sat)
= 2.7 V
= 1000 V
=
16 A
IXGA 8N100
IXGP 8N100
IXYS reserves the right to change limits, test conditions, and dimensions.
G
E
TO-263 (IXGA)
C (TAB)
Symbol
(T
J
= 25 C, unless otherwise specified)
Test Conditions
Characteristic Values
Typ.
Min.
Max.
BV
CES
V
GE(th)
I
C
I
C
= 1 mA, V
GE
= 0 V
= 250 A, V
CE
= V
GE
1000
2.5
V
V
5.0
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
25
A
A
250
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
CE90
, V
GE
= 15V
2.2
2.7
V
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
T
J
= 25 C to 150 C
= 25 C to 150 C; R
GE
= 1 M
1000
1000
V
V
V
GES
V
GEM
Continuous
Transient
20
30
V
V
I
C25
I
C90
I
CM
T
C
T
C
T
C
= 25 C
= 90 C
= 25 C, 1 ms
16
8
32
A
A
A
SSOA
(RBSOA)
V
GE
= 15 V, T
VJ
= 125 C, R
G
= 120
Clamped inductive load
I
CM
= 16
@ 0.8 V
CES
A
P
C
T
C
= 25 C
54
W
T
J
T
JM
T
stg
-55 ... +150
C
C
C
150
-55 ... +150
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
Weight
TO-220
TO-263
4
2
g
g
98565B (7/00)
Features
International standard packages
JEDEC TO-220AB and TO-263AA
Low V
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Capacitor discharge
Advantages
Easy to mount with one screw
Reduces assembly time and cost
High power density
Preliminary data sheet
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGP8N100 | IXGA8N100 |
| IXGB75N60BD1 | HiPerFAST IGBT with Diode |
| IXGE200N60B | HiPerFAST IGBT |
| IXGH10N100U1 | Low VCE(sat) IGBT with Diode, High speed IGBT with Diode |
| IXGH10N100AU1 | Low VCE(sat) IGBT with Diode, High speed IGBT with Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGA90N33TC | 功能描述:IGBT 晶體管 G-series A,B,C RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGB16N60R2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 16A I(C) | SIP |
| IXGB16N60U3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 16A I(C) | SIP |
| IXGB200N60B3 | 功能描述:IGBT 晶體管 GenX3 600V IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGB25N60R2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 25A I(C) | SIP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。