- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383196 > IXGH10N100AU1 (IXYS CORP) Low VCE(sat) IGBT with Diode, High speed IGBT with Diode PDF資料下載
參數(shù)資料
| 型號： | IXGH10N100AU1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low VCE(sat) IGBT with Diode, High speed IGBT with Diode |
| 中文描述： | 20 A, 1000 V, N-CHANNEL IGBT, TO-247AD |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 121K |
| 代理商： | IXGH10N100AU1 |
1997 IXYS All rights reserved
TO-247 AD
GC
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
1000
1000
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 150
Clamped inductive load, L = 300
μ
H
20
10
40
A
A
A
I
= 20
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
Weight
T
C
= 25
°
C
100
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque (M3)
1.13/10 Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 4 mA, V
GE
= 0 V
= 500
μ
A, V
CE
= V
GE
1000
2.5
V
V
5.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
400
μ
A
mA
5
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
10N100U1
10N100AU1
3.5
4.0
V
V
V
CES
1000 V
1000 V
I
C25
20 A
20 A
V
CE(sat)
3.5 V
4.0 V
Low V
CE(sat)
IGBT with Diode
High speed IGBT with Diode
IXGH
10
N100U1
IXGH
10
N100AU1
Combi Packs
Features
l
International standard package
JEDEC TO-247 AD
l
IGBT and anti-parallel FRED in one
package
l
2nd generation HDMOS
TM
process
l
Low V
- for low on-state conduction losses
l
MOS Gate turn-on
- drive simplicity
l
Fast Recovery
Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Space savings (two devices in one
package)
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
Reduces assembly time and cost
91753F (3/97)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGH10N100 | Low VCE(sat) IGBT, High speed IGBT |
| IXGH10N100A | Low VCE(sat) IGBT, High speed IGBT |
| IXGH10N60 | Low VCE(sat) IGBT, High speed IGBT |
| IXGH10N60A | Low VCE(sat) IGBT, High speed IGBT |
| IXGH10N60U1 | Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH10N100U1 | 功能描述:IGBT HI SPEED 1000V 20A TO-247AD RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| IXGH10N170 | 功能描述:IGBT 晶體管 20 Amps 1700 V 4 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH10N170A | 功能描述:IGBT 晶體管 20 Amps 1700 V 7 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH10N300 | 功能描述:IGBT 晶體管 Very High Voltage NPT IGBT; 3000V VCES RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH10N50U1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 10A I(C) | TO-247 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。