參數(shù)資料
型號： IXGH10N60U1
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
中文描述： 20 A, 600 V, N-CHANNEL IGBT, TO-247AD
文件頁數(shù)： 1/6頁
文件大?。?/td> 110K
代理商： IXGH10N60U1
1996 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 150
Clamped inductive load, L = 300
μ
H
20
10
40
A
A
A
I
= 20
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
Weight
T
C
= 25
°
C
100
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque (M3)
1.13/10 Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 750
μ
A, V
GE
= 0 V
= 500
μ
A, V
CE
= V
GE
600
2.5
V
V
5.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
260
2.5
μ
A
mA
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
10N60U1
10N60AU1
2.5
3.0
V
V
Features
l
International standard package
JEDEC TO-247 AD
l
IGBT and anti-parallel FRED in one
package
l
2nd generation HDMOS
TM
process
l
Low V
- for low on-state conduction losses
l
MOS Gate turn-on
- drive simplicity
l
Fast Recovery
Epitaxial Diode FRED)
- soft recovery with low I
RM
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Space savings (two devices in one
package)
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
Reduces assembly time and cost
TO-247 AD
GC
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
V
CES
600 V
600 V
I
C25
20 A
20 A
V
CE(sat)
2.5 V
3.0 V
IXGH10N60U1
IXGH10N60AU1
Low V
CE(sat)
IGBT with Diode
High speed IGBT with Diode
Combi Packs
91751G(3/96)
相關PDF資料
PDF描述
IXGH10N60AU1 Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
IXGH12N100 Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGH12N100U1 Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGH12N100AU1 Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGH12N60BD1 HiPerFAST IGBT(VDSS為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管)
相關代理商/技術參數(shù)
參數(shù)描述
IXGH120N30B3 功能描述:IGBT 晶體管 120 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH120N30C3 功能描述:IGBT 晶體管 120 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH12N100 功能描述:IGBT 晶體管 24Amps 1000V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH12N100A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 24A I(C) | TO-247AD
IXGH12N100AS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 24A I(C) | TO-247SMD
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