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參數(shù)資料
| 型號： | IXGH12N100U1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
| 中文描述： | 20 A, 1000 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 151K |
| 代理商： | IXGH12N100U1 |
1 - 5
2000 IXYS All rights reserved
Symbol
(T
J
= 25 C, unless otherwise specified)
Test Conditions
Characteristic Values
Typ.
Min.
Max.
BV
CES
I
C
BV
CES
temperature coefficient 0.072
= 3 mA, V
GE
= 0 V
1000
V
%/K
V
GE(th)
I
C
V
GE(th)
temperature coefficient -0.192
= 500 A, V
GE
= V
GE
2.5
5.5
V
%/K
I
CES
V
CE
= 0.8, V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
300
A
5
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
CE90
, V
GE
= 15
12N100U1
12N100AU1
3.5
4.0
V
V
Features
International standard packages
JEDEC TO-247
IGBT with antiparallel FRED in one
package
HDMOS
TM
process
Low V
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
DC choppers
AC motor speed control
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with one screw
Reduces assembly time and cost
Space savings (two devices in one
package)
95596C (7/00)
Low V
CE(sat)
IGBT with Diode
High Speed IGBT with Diode
Combi Pack
G = Gate
E = Emitter
C
TAB = Collector
= Collector
GC
E
C (TAB)
TO-247AD
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
T
J
= 25 C to 150 C
= 25 C to 150 C; R
GE
= 1 M
1000
1000
V
V
V
GES
V
GEM
Continuous
Transient
20
30
V
V
I
C25
I
C90
I
CM
T
C
T
C
T
C
= 25 C
= 90 C
= 25 C, 1 ms
24
12
48
A
A
A
SSOA
(RBSOA)
V
GE
= 15 V, T
VJ
= 125 C, R
G
= 150
Clamped inductive load, L = 300 H
I
CM
= 24
@ 0.8 V
CES
A
P
C
T
C
= 25 C
100
W
T
J
T
JM
T
stg
-55 ... +150
C
C
C
150
-55 ... +150
M
d
Mounting torque with screw M3
1.13/10 Nm/lb.in.
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
6
g
C
300
V
CES
I
C25
V
CE(sat)
IXGH 12N100U1
IXGH 12N100AU1
1000 V 24 A 3.5 V
1000 V 24 A 4.0 V
IXYS reserves the right to change limits, test conditions, and dimensions.
相關PDF資料 |
PDF描述 |
|---|---|
| IXGH12N100AU1 | Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
| IXGH12N60BD1 | HiPerFAST IGBT(VDSS為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) |
| IXGH12N60B | HiPerFAST IGBT(VDSS為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) |
| IXGH12N60CD1 | HiPerFASTTM IGBT LightspeedTM Series |
| IXGH12N60C | Lightspeed Series HiPerFAST IGBT(Lightspeed系列,VCES為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH12N100U1S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 24A I(C) | TO-247SMD |
| IXGH12N120A2D1 | 功能描述:MOSFET 24 Amps 1200V 2.7 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXGH12N120A3 | 功能描述:IGBT 1200V 22A TO-247 RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:GenX3™ 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IXGH12N60B | 功能描述:IGBT 晶體管 24 Amps 600V 2.1 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH12N60BD1 | 功能描述:IGBT 晶體管 24 Amps 600V 2.1 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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