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參數(shù)資料
| 型號： | IXGH12N100U1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
| 中文描述： | 20 A, 1000 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 151K |
| 代理商： | IXGH12N100U1 |
2 - 5
2000 IXYS All rights reserved
Reverse Diode (FRED)
(T
= 25 C, unless otherwise specified)
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
V
F
I
F
Pulse test, t 300 s, duty cycle d 2 %
=8A, V
GE
= 0 V,
2.75
V
I
RM
t
rr
I
F
V
R
= 540 V
I
F
= 1 A, -di/dt = 50 A/ s, V
R
= 30 V
= I
C90
, V
GE
= 0 V, -di
F
/dt = 100 A/ s
6.5
120
50
A
T
J
= 125 C
T
J
= 25 C
ns
ns
60
R
thJC
2.5
K/W
Inductive load, T
J
= 125 C
I
C
= I
C90
, V
GE
= 15 V, L = 300 H
V
CE
= 800 V, R
G
= R
off
= 120
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 25 C
I
C
= I
C90
, V
GE
= 15 V, L = 300 H
V
CE
= 800 V, R
G
= R
off
= 120
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Symbol
(T
J
= 25 C, unless otherwise specified)
Test Conditions
Characteristic Values
Min. Typ.
Max.
g
fs
I
C
Pulse test, t 300 s, duty cycle 2 %
= I
C90
; V
CE
= 10 V,
6
10
S
C
ies
C
oes
C
res
750
120
30
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1MHz
Q
g
Q
ge
Q
gc
65
90
20
45
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
8
24
t
d(on)
t
ri
t
d(off)
t
fi
100
200
850 1000
800 1000
500
2.5
1.5
100
200
1.1
900
1250
950
3.5
2.2
ns
ns
ns
ns
ns
mJ
mJ
ns
ns
mJ
ns
ns
ns
mJ
mJ
12N100U1
12N100AU1
12N100U1
12N100AU1
700
E
off
3.0
t
d(on)
t
ri
E
(on)
t
d(off)
t
fi
12N100U1
12N100AU1
12N100U1
12N100AU1
E
off
R
thJC
R
thCK
1.25
K/W
K/W
0.25
IXGH12N100U1
IXGH12N100AU1
TO-247 AD (IXGH) Outline
Dim. Millimeter
Min.
Inches
Min.
Max.
Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55
0.610 0.640
0.140 0.144
3.65
E
F
4.32
5.4
5.49
6.2
0.170 0.216
0.212 0.244
G
H
1.65
2.13
4.5
0.065 0.084
-
-
0.177
J
K
1.0
10.8
1.4
11.0
0.040 0.055
0.426 0.433
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5
2.49
0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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PDF描述 |
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| IXGH12N100AU1 | Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
| IXGH12N60BD1 | HiPerFAST IGBT(VDSS為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) |
| IXGH12N60B | HiPerFAST IGBT(VDSS為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) |
| IXGH12N60CD1 | HiPerFASTTM IGBT LightspeedTM Series |
| IXGH12N60C | Lightspeed Series HiPerFAST IGBT(Lightspeed系列,VCES為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH12N100U1S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 24A I(C) | TO-247SMD |
| IXGH12N120A2D1 | 功能描述:MOSFET 24 Amps 1200V 2.7 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXGH12N120A3 | 功能描述:IGBT 1200V 22A TO-247 RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:GenX3™ 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| IXGH12N60B | 功能描述:IGBT 晶體管 24 Amps 600V 2.1 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH12N60BD1 | 功能描述:IGBT 晶體管 24 Amps 600V 2.1 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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