參數(shù)資料
型號(hào): IXGH10N60U1
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
中文描述: 20 A, 600 V, N-CHANNEL IGBT, TO-247AD
文件頁數(shù): 5/6頁
文件大?。?/td> 110K
代理商: IXGH10N60U1
1996 IXYS All rights reserved
di
F
/dt - A/μs
0
100
200
300
400
t
r
0
100
200
300
400
di
F
/dt - A/μs
0
100
200
300
400
I
R
0
5
10
15
20
25
max
di
F
/dt - A/μs
1
10
100
1000
Q
r
0.0
0.2
0.4
0.6
0.8
1.0
max
T
J
= 100°C
V
R
= 350V
I
F
= 8A
T
J
- Degrees C
0
40
80
120
160
N
R
r
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Q
r
I
RM
di
F
/dt - A/μs
0
50
100
150
200
250
300
V
F
0
5
10
15
20
25
t
f
0
200
400
600
800
1000
t
fr
V
FR
Voltage Drop - Volts
0.0
0.5
1.0
1.5
2.0
2.5
C
0
5
10
15
20
25
30
35
40
T
J
= 100°C
T
J
= 125°C
I
F
= 8A
T
J
= 150°C
T
J
= 25°C
T
J
= 100°C
V
R
= 350V
I
F
= 8A
T
J
= 100°C
V
R
= 350V
I
F
= 8A
Fig.13 Junction Temperature Dependence
off I
RM
and Q
r
Fig.14
Reverse Recovery Charge
Fig.15 Peak Reverse Recovery Current
Fig.16
Reverse Recovery Time
Fig.11 Maximum Forward Voltage Drop
Fig.12
Peak Forward Voltage V
FR
and
Forward Recovery Time t
FR
IXGH10N60U1
IXGH10N60AU1
相關(guān)PDF資料
PDF描述
IXGH10N60AU1 Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
IXGH12N100 Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGH12N100U1 Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGH12N100AU1 Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGH12N60BD1 HiPerFAST IGBT(VDSS為600V,VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管)
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