參數(shù)資料
型號(hào)： IXGH10N60
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： Low VCE(sat) IGBT, High speed IGBT
中文描述： 20 A, 600 V, N-CHANNEL IGBT, TO-247AD
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 46K
代理商： IXGH10N60
1996 IXYS All rights reserved
TO-247 AD
G
CE
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
1000
1000
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 150
Clamped inductive load, L = 300
μ
H
20
10
40
A
A
A
I
= 20
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
Weight
T
C
= 25
°
C
100
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque (M3)
1.13/10 Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 3 mA, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
1000
2.5
V
V
5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
250
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
10N100
10N100A
3.5
4.0
V
V
V
CES
1000 V
1000 V
I
C25
20 A
20 A
V
CE(sat)
3.5 V
4.0 V
Low V
CE(sat)
IGBT
High speed IGBT
IXGH
10
N100
IXGH
10
N100A
Features
l
International standard package
JEDEC TO-247 AD
l
2nd generation HDMOS
TM
process
l
Low V
- for low on-state conduction losses
l
High current handling capability
l
MOS Gate turn-on
- drive simplicity
l
Voltage rating guaranteed at high
temperature (125
°
C)
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
High power density
93004D (3/96)
相關(guān)PDF資料
PDF描述
IXGH10N60A Low VCE(sat) IGBT, High speed IGBT
IXGH10N60U1 Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
IXGH10N60AU1 Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
IXGH12N100 Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGH12N100U1 Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXGH10N60A 制造商:IXYS Corporation 功能描述:IXGH Series 600 Vce 20 A 100 ns t(on) IGBT w/ Diode - TO-247AD
IXGH10N60AU1 功能描述:IGBT 晶體管 G-series A,B,C RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH10N60U1 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
IXGH120N30B3 功能描述:IGBT 晶體管 120 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH120N30C3 功能描述:IGBT 晶體管 120 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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