參數(shù)資料
型號(hào)： IS66WVD409616ALL-7010BLI
元件分類(lèi)： SRAM
英文描述： 4M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54
封裝： 8 X 6 MM, MO-207, VFBGA-54
文件頁(yè)數(shù)： 1/52頁(yè)
文件大?。?/td> 1128K
代理商： IS66WVD409616ALL-7010BLI
IS66WVD409616ALL
Advanced Information
1
Rev.00A | January 2010
www.issi.com - SRAM@issi.com
Overview
The IS66WVD409616ALL is an integrated memory device containing 64Mbit Pseudo Static Random
Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a
multiplexed address and data bus scheme to minimize pins and includes a industry standard burst
mode for increased read and write bandwidth. The device includes several power saving modes :
Reduced Array Refresh mode where data is retained in a portion of the array and Temperature
Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a
standard asynchronous mode and high performance burst mode. The die has separate power rails,
VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Single device supports asynchronous and burst
operation
Mixed Mode supports asynchronous write and
synchronous read operation
Dual voltage rails for optional performance
VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
Multiplexed address and data bus
ADQ0~ADQ15
Asynchronous mode read access : 70ns
Burst mode for Read and Write operation
4, 8, 16 or Continuous
Low Power Consumption
Asynchronous Operation < 25 mA
Burst operation < 45 mA (@133Mhz)
Standby < 140 uA(max.)
Deep power-down (DPD) < 3uA (Typ)
Low Power Feature
Reduced Array Refresh
Temperature Controlled Refresh
Operation Frequency up to 133MHz
Operating temperature Range
Industrial -40°C~85°C
Package: 54-ball VFBGA
64Mb Async and Burst CellularRAM 2.0
Features
Copyright 2009 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information
and before placing orders for products.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS66WVE1M16ALL 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1.8V Core Async/Page PSRAM
IS66WVE1M16ALL-70BLI 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1.8V Core Async/Page PSRAM
IS66WVE1M16BLL 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:3.0V Core Async/Page PSRAM
IS66WVE1M16BLL-55BLI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16Mb 1M x 16 55ns Pseudo 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS66WVE1M16BLL-55BLI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16Mb 1M x 16 55ns Pseudo 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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