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參數(shù)資料
| 型號： | IRF6621 |
| 廠商： | International Rectifier |
| 英文描述： | The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance |
| 中文描述： | 該顆IRF6621結(jié)合先進(jìn)的DirectFET封裝，以實現(xiàn)最低的導(dǎo)通電阻最新的HEXFET功率MOSFET硅技術(shù) |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 254K |
| 代理商： | IRF6621 |
www.irf.com
9
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
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06/05
DirectFET
Tape & Reel Dimension (Showing component orientation).
METRIC
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
IMPERIAL
STANDARD OPTION
(QTY 4800)
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6621). For 1000 parts on 7" reel,
order IRF6621TR1
METRIC
MAX
N.C
N.C
12.8
N.C
N.C
13.50
12.01
12.01
IMPERIAL
MIN
6.9
0.75
0.53
0.059
2.31
N.C
0.47
0.47
TR1 OPTION
(QTY 1000)
MIN
177.77
19.06
13.5
1.5
58.72
N.C
11.9
11.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
REEL DIMENSIONS
Loaded Tape Feed Direction
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
0.063
MIN
0.311
0.154
0.469
0.215
0.158
0.197
0.059
0.059
MAX
8.10
4.10
12.30
5.55
4.20
5.20
N.C
1.60
DIMENSIONS
METRIC
IMPERIAL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF6622 | DirectFET Power MOSFET |
| IRF6629PBF | DirectFET Power MOSFET |
| IRF6629TRPbF | DirectFET Power MOSFET |
| IRF6631 | DirectFET Power MOSFET |
| IRF6636 | Low Resistance and Low Charge Along With Ultra Low Package Inductance to Reduce |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6621PbF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFETPower MOSFET |
| IRF6621TR1 | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6621TR1PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6621TR1PBF | 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N CH MOSFET, 30V, 9.6A DIRECTFET SQ |
| IRF6621TRPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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