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參數(shù)資料
| 型號： | IRF6621 |
| 廠商： | International Rectifier |
| 英文描述： | The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance |
| 中文描述： | 該顆IRF6621結(jié)合先進(jìn)的DirectFET封裝，以實(shí)現(xiàn)最低的導(dǎo)通電阻最新的HEXFET功率MOSFET硅技術(shù) |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 254K |
| 代理商： | IRF6621 |
www.irf.com
5
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
Fig 12.
Maximum Drain Current vs. Case Temperature
Fig 10.
Typical Source-Drain Diode Forward Voltage
Fig11.
Maximum Safe Operating Area
Fig 14.
Maximum Avalanche Energy Vs. Drain Current
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
1
10
100
1000
IS
VGS = 0V
TJ = 150°C
TJ = 25°C
TJ = -40°C
0.1
1.0
10.0
100.0
VDS , Drain-toSource Voltage (V)
0.01
0.1
1
10
100
1000
ID
TA = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
25
50
75
100
125
150
TC , Case Temperature (°C)
0
10
20
30
40
50
60
ID
-75
-50
-25
0
25
50
75
100
125
150
TJ , Junction Temperature ( °C )
1.0
1.5
2.0
2.5
T(
ID = 250μA
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
0
10
20
30
40
50
60
EA
ID
TOP
3.0A
4.3A
BOTTOM
9.6A
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PDF描述 |
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| IRF6622 | DirectFET Power MOSFET |
| IRF6629PBF | DirectFET Power MOSFET |
| IRF6629TRPbF | DirectFET Power MOSFET |
| IRF6631 | DirectFET Power MOSFET |
| IRF6636 | Low Resistance and Low Charge Along With Ultra Low Package Inductance to Reduce |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6621PbF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFETPower MOSFET |
| IRF6621TR1 | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6621TR1PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6621TR1PBF | 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N CH MOSFET, 30V, 9.6A DIRECTFET SQ |
| IRF6621TRPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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