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參數(shù)資料
| 型號(hào)： | IRF6621 |
| 廠商： | International Rectifier |
| 英文描述： | The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance |
| 中文描述： | 該顆IRF6621結(jié)合先進(jìn)的DirectFET封裝，以實(shí)現(xiàn)最低的導(dǎo)通電阻最新的HEXFET功率MOSFET硅技術(shù) |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 254K |
| 代理商： | IRF6621 |
4
www.irf.com
Fig 5.
Typical Output Characteristics
Fig 4.
Typical Output Characteristics
Fig 6.
Typical Transfer Characteristics
Fig 7.
Normalized On-Resistance vs. Temperature
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance Vs.
Drain Current and Gate Voltage
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
TOP
BOTTOM
≤
60μs PULSE WIDTH
Tj = 25°C
2.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
TOP
BOTTOM
≤
60μs PULSE WIDTH
Tj = 150°C
2.5V
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID
(
)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VDS = 15V
≤
60μs PULSE WIDTH
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
TD
ID = 12A
VGS = 10V
VGS = 4.5V
0
20
40
60
80
100
ID, Drain Current (A)
4
8
12
16
20
TD
)
TJ = 25°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6621PbF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFETPower MOSFET |
| IRF6621TR1 | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6621TR1PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6621TR1PBF | 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N CH MOSFET, 30V, 9.6A DIRECTFET SQ |
| IRF6621TRPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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