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參數(shù)資料
| 型號： | IRF6621 |
| 廠商： | International Rectifier |
| 英文描述： | The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance |
| 中文描述： | 該顆IRF6621結(jié)合先進(jìn)的DirectFET封裝，以實(shí)現(xiàn)最低的導(dǎo)通電阻最新的HEXFET功率MOSFET硅技術(shù) |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 254K |
| 代理商： | IRF6621 |
2
www.irf.com
Pulse width
≤
400μs; duty cycle
≤
2%.
Repetitive rating; pulse width limited by max. junction temperature.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
30
Typ.
–––
Max. Units
–––
BV
DSS
Β
V
DSS
/
T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
V
Breakdown Voltage Temp. Coefficient
–––
24
–––
mV/°C
m
Static Drain-to-Source On-Resistance
–––
7.0
9.1
–––
9.3
12.1
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Gate Threshold Voltage
1.35
1.8
2.25
V
Gate Threshold Voltage Coefficient
–––
-5.1
–––
mV/°C
Drain-to-Source Leakage Current
–––
–––
1.0
μA
–––
–––
150
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Q
g
Forward Transconductance
31
–––
–––
S
Total Gate Charge
–––
11.7
17.5
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Diode Characteristics
Pre-Vth Gate-to-Source Charge
–––
3.3
–––
Post-Vth Gate-to-Source Charge
–––
1.0
–––
nC
Gate-to-Drain Charge
–––
4.2
–––
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
–––
3.2
–––
See Fig. 15
–––
5.2
–––
–––
–––
6.9
2.0
–––
–––
nC
Turn-On Delay Time
–––
16
–––
Rise Time
–––
4.1
–––
Turn-Off Delay Time
–––
12
–––
ns
Fall Time
–––
14
–––
Input Capacitance
–––
1460
–––
Output Capacitance
–––
310
–––
pF
Reverse Transfer Capacitance
–––
170
–––
Parameter
Continuous Source Current
Min.
–––
Typ.
–––
Max. Units
52
I
S
(Body Diode)
A
I
SM
Pulsed Source Current
–––
–––
96
(Body Diode)
V
SD
t
rr
Q
rr
Diode Forward Voltage
–––
0.8
1.0
V
Reverse Recovery Time
–––
9.8
15
ns
Reverse Recovery Charge
–––
10
15
nC
di/dt = 420A/μs
T
J
= 25°C, I
S
= 9.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.6A
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 9.6A
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V
I
D
= 9.6A
V
GS
= 0V
V
DS
= 15V
= 1.0MHz
I
D
= 9.6A
Clamped Inductive Load
V
DD
= 15V, V
GS
= 4.5V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 12A
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 9.6A
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
DS
= 15V
MOSFET symbol
Conditions
V
DS
= 15V, V
GS
= 0V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6621PbF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFETPower MOSFET |
| IRF6621TR1 | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6621TR1PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6621TR1PBF | 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N CH MOSFET, 30V, 9.6A DIRECTFET SQ |
| IRF6621TRPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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