參數資料
型號: HYB18T1G800C4F-3
廠商: QIMONDA AG
元件分類: DRAM
英文描述: 128M X 8 DDR DRAM, 0.45 ns, PBGA60
封裝: GREEN, PLASTIC, TFBGA-60
文件頁數: 49/58頁
文件大?。?/td> 1898K
代理商: HYB18T1G800C4F-3
HYB18T1G[40/80/16]0C4F
1-Gbit Double-Data-Rate-Two SDRAM
Internet Data Sheet
Rev. 1.01, 2008-11
53
04212008-66HT-ZLFE
9
Product Nomenclature
For reference the Qimonda SDRAM component nomenclature is enclosed in this chapter.
TABLE 42
Examples for Nomenclature Fields
TABLE 43
DDR2 Memory Components
Example for
Field Number
12345678910
DDR2 DRAM
HYB
18
T
1G
16
0
A
F
–3.7
Field Description
Values
Coding
1
Qimonda Component Prefix
HYB
Memory components, standard temperature range (0°C – +95 °C)
HYI
Memory components, industrial temperature range (-40°C – +95 °C)
2
Interface Voltage [V]
18
SSTL_18, + 1.8 V (± 0.1 V)
15
SSTL_15, + 1.5 V (± 0.1 V)
3
DRAM Technology
T
DDR2
4
Component Density [Mbit]
32
32 Mbit
64
64 Mbit
128
128 Mbit
256
256 Mbit
512
512 Mbit
1G
1 Gbit
2G
2 Gbit
4G
4 Gbit
5
Number of I/Os
40
× 4
80
× 8
16
× 16
6
Product Variant
0 .. 9
7
Die Revision
A ( 0...9 ) First
B ( 0...9 ) Second
C ( 0...9 ) Third
8
Package,
Lead-Free Status
C
FBGA, Lead-containing
F
FBGA, Lead- and Halogen-free
9
Power
Standard power product
L
Low power product
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