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參數(shù)資料
| 型號： | HX6218DBNC |
| 元件分類： | FIFO |
| 英文描述： | 2K X 18 OTHER FIFO, 30 ns, CQFP68 |
| 封裝： | CERAMIC, QFP-68 |
| 文件頁數(shù)： | 4/15頁 |
| 文件大?。?/td> | 717K |
| 代理商： | HX6218DBNC |
FIFO – HX6409/HX6218/HX6136
12
www.honeywell.com
QUALITY AND RADIATION HARDNESS
ASSURANCE
Honeywell maintains a high level of product integrity
through process control, utilizing statistical process
control, a complete “Total Quality Assurance System,”
a computer database process performance tracking
system and a radiation hardness assurance strategy.
The radiation hardness assurance strategy starts with a
technology that is resistant to the effects of radiation.
Radiation hardness is assured on every wafer by
irradiating test structures as well as SRAM product, and
then monitoring key parameters, which are sensitive to
ionizing radiation. Conventional MIL-STD-883 TM 5005
Group E testing, which includes total dose exposure
with Cobalt 60, may also be performed as required.
This Total Quality approach ensures our customers of a
reliable product by engineering in reliability, starting
with process development and continuing through
product qualification and screening.
SCREENING LEVELS
Honeywell offers several levels of device screening to
meet your system needs. “Engineering Devices” are
available with limited performance and screening for
breadboarding and/or evaluation testing. Hi-Rel Level B
and S devices undergo additional screening per the
requirements of MIL-STD-883.
RELIABILITY
Honeywell understands the stringent reliability
requirements for space and defense systems and has
extensive experience in reliability testing on programs
of this nature. This experience is derived from
comprehensive testing of VLSI processes. Reliability
attributes of the RICMOSTM process were characterized
by testing specially designed irradiated and non-
irradiated test structures from which specific failure
mechanisms were evaluated. These specific
mechanisms included, but were not limited to, hot
carriers, electromigration and time dependent dielectric
breakdown. This data was then used to make changes
to the design models and process to ensure more
reliable products.
In addition, the reliability of the RICMOS process and
product in a military environment was monitored by
testing irradiated and non-irradiated circuits in
accelerated dynamic life test conditions. Packages are
qualified for product use after undergoing Group B & D
testing as outlined in MIL-STD-883, TM 5005, Class S.
The product is qualified by following a screening and
testing flow to meet the customer’s requirements.
Quality conformance testing is performed as an option
on all production lots to ensure the ongoing reliability of
the product.
相關PDF資料 |
PDF描述 |
|---|---|
| HX6228TBNC | 128K X 8 STANDARD SRAM, 25 ns, CDFP32 |
| HX6228TQHC | 128K X 8 STANDARD SRAM, 25 ns, CDFP32 |
| HX6228ASNT | 128K X 8 STANDARD SRAM, 25 ns, CDFP40 |
| HX6409TQHT | 4K X 9 OTHER FIFO, 30 ns, CDFP32 |
| HX80ML | 0.02 A, 8000 V, SILICON, SIGNAL DIODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HX6218DBNT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Synchronous FIFO |
| HX6218DBRC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Synchronous FIFO |
| HX6218DBRT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Synchronous FIFO |
| HX6218DENC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Synchronous FIFO |
| HX6218DENT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Synchronous FIFO |
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