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參數(shù)資料
| 型號： | HX6218DBNC |
| 元件分類： | FIFO |
| 英文描述： | 2K X 18 OTHER FIFO, 30 ns, CQFP68 |
| 封裝： | CERAMIC, QFP-68 |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 717K |
| 代理商： | HX6218DBNC |
FIFO – HX6409/HX6218/HX6136
4
www.honeywell.com
RADIATION CHARACTERISTICS
Total Ionizing Radiation Dose
All FIFO configurations will meet all stated functional
and electrical specifications over the entire operating
temperature range after the specified total ionizing
radiation dose. All electrical and timing performance
parameters will remain within specifications after
rebound at VDD = 5.5 V and T = 125°C extrapolated to
ten years of operation. Total dose hardness is assured
by wafer level testing of process monitor transistors and
product using 10 KeV X-ray and Co60 radiation
sources. Transistor gate threshold shift correlations
have been made between 10 KeV X-rays applied at a
dose rate of 1x10
5 rad(Si)/min at T = 25°C and gamma
rays (Cobalt 60 source) to ensure that wafer level X-ray
testing is consistent with standard military radiation test
environments.
Transient Pulse Ionizing Radiation
Each FIFO configuration is capable of writing, reading
and retaining stored data during and after exposure to a
transient ionizing radiation pulse of ≤50 ns duration up
to 1x10
9 rad(Si)/s, when applied under recommended
operating
conditions. To ensure validity of all specified
performance parameters before, during, and after
radiation (timing degradation during transient pulse
radiation is ≤10%), it is suggested that stiffening
capacitance be placed near the package VDD and
VSS, with a maximum inductance between the package
(chip) and stiffening capacitor of 0.7nH per part. If there
are no operate-through or valid stored data
requirements, typical circuit board mounted de-coupling
capacitors are recommended.
Each FIFO will meet any functional or electrical
specification after exposure to a radiation pulse of ≤50
ns duration up to 1x10
11 rad(Si)/s, when applied under
recommended operating conditions. Note the current
conducted by the inputs, outputs and power supply
during the pulse may significantly exceed the normal
operating levels. The application design must
accommodate these effects.
Neutron Radiation
Each FIFO configuration will meet any functional or
timing specification after a total neutron fluence of up to
1x1014 cm-2 applied under recommended operating or
storage conditions. This assumes equivalent neutron
energy of 1 MeV.
Soft Error Rate
This FIFO configuration has a soft error rate (SER)
performance of <1x10-10 upsets/bit-day, under
recommended operating conditions. This hardness
level is defined by the Adams 90% worst-case cosmic
ray environment.
Latchup
This FIFO configuration will not latch up due to any of
the above radiation exposure conditions when applied
under recommended operating conditions. Fabrication
with the SOI substrate with its oxide isolation ensures
latchup immunity.
相關PDF資料 |
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|---|---|
| HX6228TBNC | 128K X 8 STANDARD SRAM, 25 ns, CDFP32 |
| HX6228TQHC | 128K X 8 STANDARD SRAM, 25 ns, CDFP32 |
| HX6228ASNT | 128K X 8 STANDARD SRAM, 25 ns, CDFP40 |
| HX6409TQHT | 4K X 9 OTHER FIFO, 30 ns, CDFP32 |
| HX80ML | 0.02 A, 8000 V, SILICON, SIGNAL DIODE |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HX6218DBNT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Synchronous FIFO |
| HX6218DBRC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Synchronous FIFO |
| HX6218DBRT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Synchronous FIFO |
| HX6218DENC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Synchronous FIFO |
| HX6218DENT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Synchronous FIFO |
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