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參數(shù)資料
| 型號(hào)： | HX6218DBNC |
| 元件分類： | FIFO |
| 英文描述： | 2K X 18 OTHER FIFO, 30 ns, CQFP68 |
| 封裝： | CERAMIC, QFP-68 |
| 文件頁(yè)數(shù)： | 11/15頁(yè) |
| 文件大小： | 717K |
| 代理商： | HX6218DBNC |
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FIFO – HX6409/HX6218/HX6136
www.honeywell.com
5
RADIATION-HARDNESS RATINGS (1)
Parameter
Limits (2)
Units
Test Conditions
Total Dose
>1x10
6
rad(Si)
TA=25°C
Transient Dose Rate Upset
>1x10
9
rad(Si)/s
Pulse width
≤50ns
Transient Dose Rate Survivability
>1x10
11
rad(Si)/s
Pulse width
≤50ns, X-ray, VDD=6.0 V, TA=25°C
Soft Error Rate
<1x10
-10
upsets/bit-day
TA=125°C, Adams 90% worst case environment
Neutron Fluence
>1x10
14
N/cm
2
1 MeV equivalent energy, Unbiased, TA=25°C
(1) Device will not latch up due to any of the specified radiation exposure conditions.
(2) Operating conditions (unless otherwise specified): VDD= 4.5V to 5.5V, TA = 55C to 125C.
ABSOLUTE MAXIMUM RATINGS (1)
Rating
Symbol
Parameter
Min
Max
Units
VDD
Supply Voltage Range (2)
-0.5
6.5
V
VPIN
Voltage on Any Pin (2)
-0.5
VDD+0.5
V
TSTORE
Storage Temperature (Zero Bias)
-65
150
C
TSOLDER
Soldering Temperature (5 seconds)
270
C
PD
Maximum Power Dissipation (3)
2.5
W
IOUT
DC or Average Output Current
2.5
mA
VPROT
ESD Input Protection Voltage (4)
2000
V
ΘJC
Thermal Resistance (Jct-to-Case)
5
C/W
TJ
Junction Temperature
175
C
(1) Stesses in excess of those listed above may result in permanent damage. These are stress ratings only, and
operation at these levels is not implied. Frequent or extended exposure to absolute maximum conditions may
affect device reliability.
(2) Voltage referenced to VSS.
(3) FIFO power dissipation (IDDSB + IDDOP) plus FIFO output driver power dissipation due to external loading
must not exceed this specification.
(4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DESC
certified lab.
RECOMMENDED OPERATING CONDITIONS
Description
Symbol
Parameter
Min
Typ
Max
Units
VDD
Supply Voltage (referenced to VSS)
4.5
5.0
5.5
V
TA
Ambient Temperature
-55
25
125
C
VPIN
Voltage on Any Pin (referenced to VSS)
-0.3
VDD+0.3
V
CAPACITANCE (1)
Worst Case
Symbol
Parameter
Typical (1)
Min
Max
Units
Test Conditions
CI
Input Capacitance
7
pF
VI=VDD or VSS, f=1 MHz
CO
Output Capacitance
9
pF
VIO=VDD or VSS, f=1 MHz
(1) This parameter is tested during design characterization only.
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