
FIFO – HX6409/HX6218/HX6136
6
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DATA RETENTION CHARACTERISTICS
Worst Case (2)
Symbol
Parameter
Typical (1)
Min
Max
Units
Test Conditions
VDR
Data Retention Voltage
2.5
V
ENW = ENR = VDR
IDR
Data Retention Current
500
A
ENW = ENR = VDR
(1) Typical operating conditions: TA=25C, pre-radiation.
(2) Worst case operating conditions: TC=-55C to +125C, post total dose at 25C.
Worst Case (1)
Symbol
Test Parameters
Min
Max
Units
Conditions
VIH
Input High Voltage
CMOS
TTL
0.7xVDD
2.2
-
V
VDD=5.5V
VIL
Input Low Voltage
CMOS
TTL
-
0.3xVDD
0.8
V
VDD=4.5V
VOH1
High Output Voltage
3.5
-
V
VDD=4.5v
IOH=-4.0mA
VOH2
High Output Voltage
VDD-0.4
-
V
VDD=4.5v
IOH=-100A
VOL
Low Output Voltage
-
0.4
V
VDD=4.5V
IOL=4.0mA
II
Input Leakage Current
-1.0
+1.0
A
VDD=5.5V
VIN=0V or VDD
TC=-55C to
+125C
OE
≥VIH,
IOZL
IOZH
Output OFF, High Z Current
-10.0
+10.0
A
VSS<VO<VDD
IDDSB
Standby Power Supply Current (2)
4kx9, 1kx36, 2kx18
-
1
mA
VIN=0V or VDD
CLK(s)=1 MHz
IDDOP
Operating Power Supply Current (2)
4kx9
2kx18
1kx36
-
8
9
12
mA
VIN=0V or VDD
CLK(s)=1MHz
IDDSB
Standby Power Supply Current (2)
4kx9, 2kx18, 1kx36
-
24
mA
VIN=0V or VDD
CLK(s)=27MHz
IDDOP
Operating Power Supply Current (2)
4kx9
2kx18
1kx36
-
280
330
500
mA
VIN=0V or VDD
CLK(s)=27MHz
(1) Worst case operating conditions: VDD=4.5 to 5.5V, TC=-55
°C to +125°C, post total dose at 25°C.
(2) Standby current for the device includes the Read Clock (CKR) and Write Clock (CKW) only. Both
the Read Enable (ENR) and Write Enable (ENW) are disabled (ENR, ENW = vdd). For operating
currents, ENR and ENW are enabled (=0.0V) and data inputs are switching at one half the clock
speed between 0.0V and VDD.
DC ELECTRICAL CHARACTERISTICS