
HB56S872ESN Series,
HB56S864ESN Series
8,388,608-word
× 72-bit High Density Dynamic RAM Module
8,388,608-word
× 64-bit High Density Dynamic RAM Module
ADE-203-778A (Z)
Rev. 1.0
Apr. 30, 1997
Description
The HB56S872ESN, HB56S864ESN belong to 8 Byte DIMM (Dual In-line Memory Module) family, and
have been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
HB56S872ESN is a 8M
× 72 dynamic RAM module, mounted 36 pieces of 16-Mbit DRAM (HM5116405)
sealed in TCP package and 1 pieces of serial EEPROM (24C02) for Presence Detect (PD).
The
HB56S864ESN is a 8M
× 64 dynamic RAM module, mounted 32 pieces of 16-Mbit DRAM (HM5116405)
sealed in TCP package and 1 pieces of serial EEPROM (24C02) for Presence Detect (PD).
The
HB56S872ESN, HB56S864ESN offer Extended Data Out (EDO) Page Mode as a high speed access mode.
An outline of the HB56S872ESN, HB56S864ESN is 168-pin socket type package (dual lead out).
Therefore, the HB56S872ESN, HB56S864ESN make high density mounting possible without surface
mount technology. The HB56S872ESN, HB56S864ESN provide common data inputs and outputs.
Decoupling capacitors are mounted beneath each TCP on the module board.
Features
168-pin socket type package (Dual lead out)
Lead pitch: 1.27 mm
Single 5.0 V (±5%) supply
JEDEC standard outline unbufferd 8 byte DIMM
High speed
Access time: t
RAC = 60/70 ns (max)
t
CAC = 15/18 ns (max)
Low power dissipation
Active mode: 8.03/7.09 W (max) (HB56S872ESN)
7.14/6.30 W (max) (HB56S864ESN)
Standby mode (TTL): 378 mW (max) (HB56S872ESN)
(TTL): 336 mW (max) (HB56S864ESN)
(CMOS): 189 mW (max) (HB56S872ESN)
(CMOS): 168 mW (max) (HB56S864ESN)
EDO page mode capability