參數(shù)資料
型號(hào): HB52F169E1
廠商: Hitachi,Ltd.
英文描述: 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述: 128 MB的注冊(cè)SDRAM的內(nèi)存(128 MB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 49/57頁
文件大?。?/td> 870K
代理商: HB52F169E1
HB52F169E1-75F
49
Mode Register Set Cycle
Read Cycle/Write Cycle
/
N
RE
-
CE
delay = 3
CE
latency = 4
Burst length = 4
= V or V
IH
IL
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CK
CKE
S
RE
CE
W
BA
Address
DQMB
Din
Dout
@
H
I
&
'
/
0
8
M
H
N
a
a+1 a+2 a+3
Din
/
7
@
&
'
/
%
-
.
6
>
G
G
O
P
;
C
D
L
M
%
&
High-Z
b
b+3
b’
b’+1
b’+2
b’+3
l
valid
H
C: b’
RSA
code
lRCD
lRP
Precharge
If needed
Mode
register
Set
Bank 3
Active
Bank 3
Read
@
H
I
/
8
9
@
A
/
7
8
@
D
L
M
'
(
/
0
8
9
(
@
H
6
GH
P%
.
/
7
%
&
/
R: b
C: b
.
7
@
H
P
4
R:b
C:b
C:b'
C:b"
5
=
>
E
F
N
Output mask
V
IH
l = 3
CE
latency = 4
Burst length = 4
= V or V
IH
IL
RCD
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
R:a
C:a
R:b
C:b
C:b'
C:b"
a
a+1 a+2 a+3
b
b+1 b+2 b+3 b'
b'+1 b"
b"+1 b"+2 b"+3
CKE
RE
CE
W
S
Address
DQMB
Dout
Din
CK
BA
=
F
O
<
=
E
<
=
E
F
F
G
O
=
E
F
R:a
C:a
b
b+1 b+2 b+3 b'
b'+1 b"
b"+1b"+2 b"+3
I
I
A
B
J
K
8
A
J
7
8
@
A
A
B
J
8
@
A
J
I
J
@
I
I
J
@
I
9
:
B
0
9
B
'
0
8
9
'
/
0
8
9
'
/
0
8
A
(
1
:
'
(
0
1
'
(
0
(
0
1
'
(
0
5
>
F
G
4
5
=
F
+
4
5
=
5
=
>
F
4
5
=
>
F-
5
>
+
,
5
,
5
>
,
5
>
#
,
5$
%
-
#$
,
,$
-
,%
(
!
(
)
1
2
(
)
1
(
1
(
C
K
L
B
C
K
L
B
C
J
K
9
B
J
K
J
K
K
J
K
0
9
A
B
J
Bank 0
Active
Bank 0
Read
Bank 3
Active
Bank 3
Read
Bank 3
Read
Bank 3
Read
Bank 0
Precharge
Bank 3
Precharge
Bank 0
Active
Bank 0
Write
Bank 3
Active
Bank 3
Write
Bank 3
Write
Bank 3
Write
Bank 0
Precharge
Bank 3
Precharge
CKE
RE
S
CE
W
BA
Address
DQMB
Dout
High-Z
High-Z
4
5
=
E
F
$
7
8
@
I
1
2
9
:
B
C
V
IH
V
IH
Read cycle
RE
-
CE
delay = 3
CE
latency = 4
Burst length = 4
= V or V
IH
IL
Write cycle
!
相關(guān)PDF資料
PDF描述
HB52F649E1 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM
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