參數(shù)資料
型號: HB52F649E1-75B
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM
中文描述: 64M X 72 SYNCHRONOUS DRAM MODULE, 6.3 ns, DMA168
封裝: DIMM-168
文件頁數(shù): 1/16頁
文件大?。?/td> 143K
代理商: HB52F649E1-75B
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
HB52F649E1-75B
512 MB Registered SDRAM DIMM
64-Mword
×
72-bit, 133 MHz Memory Bus, 1-Bank Module
(18 pcs of 64 M
×
4 Components)
PC133SDRAM
E0021H20 (Ver. 2.0)
Aug. 20, 2001 (K)
Description
The HB52F649E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed
as an optimized main memory solution for 8-byte processor applications. The HB52F649E1 is a 64M
×
72
×
1-bank Synchronous Dynamic RAM Registered Module, mounted 18 pieces of 256-Mbit SDRAM
(HM5225405BTT) sealed in TSOP package, 1 piece of PLL clock driver, 3 pieces of register driver and 1
piece of serial EEPROM (2-kbit) for Presence Detect (PD). An outline of the HB52F649E1 is 168-pin socket
type package (dual lead out). Therefore, the HB52F649E1 makes high density mounting possible without
surface mount technology. The HB52F649E1 provides common data inputs and outputs. Decoupling
capacitors are mounted beside each TSOP on the module board.
Features
Fully compatible with : JEDEC standard outline 8-byte DIMM
168-pin socket type package (dual lead out)
Outline: 133.35 mm (Length)
×
43.18 mm (Height)
×
4.00 mm (Thickness)
Lead pitch: 1.27 mm
3.3 V power supply
Clock frequency: 133 MHz (max)
LVTTL interface
Data bus width:
×
72 ECC
Single pulsed
RAS
4 Banks can operates simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length: 1/2/4/8
2 variations of burst sequence
Sequential
Interleave
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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