參數(shù)資料
型號(hào): HB52F649E1-75B
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM
中文描述: 64M X 72 SYNCHRONOUS DRAM MODULE, 6.3 ns, DMA168
封裝: DIMM-168
文件頁數(shù): 9/16頁
文件大?。?/td> 143K
代理商: HB52F649E1-75B
HB52F649E1-75B
Data Sheet E0021H10
9
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to V
SS
V
T
0.5 to V
+ 0.5
(
4.6 (max))
V
1
Supply voltage relative to V
SS
Short circuit output current
V
CC
Iout
0.5 to +4.6
V
1
50
mA
Power dissipation
P
T
Topr
18.0
W
Operating temperature
0 to +55
°
C
Storage temperature
Note:
1. Respect to V
SS
Tstg
50 to +100
°
C
DC Operating Conditions
(Ta = 0 to +55°C)
Parameter
Symbol
Min
Max
Unit
Notes
Supply voltage
V
CC
V
SS
V
IH
V
IL
3.0
3.6
V
1, 2
0
0
V
3
Input high voltage
2.0
V
CC
0.8
V
1, 4
Input low voltage
Notes: 1. All voltage referred to V
SS
2. The supply voltage with all V
CC
pins must be on the same level.
3. The supply voltage with all V
SS
pins must be on the same level.
4. V
IH
(max) = V
CC
+ 2.0 V for pulse width
3 ns at V
CC
.
5. V
IL
(min) = V
SS
2.0 V for pulse width
3 ns at V
SS
.
0
V
1, 5
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