參數(shù)資料
型號: HB52F169E1
廠商: Hitachi,Ltd.
英文描述: 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述: 128 MB的注冊SDRAM的內(nèi)存(128 MB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 36/57頁
文件大?。?/td> 870K
代理商: HB52F169E1
HB52F169E1-75F
36
WRITE to WRITE Command Interval (same ROW address in same bank)
2. Same bank, different ROW address:
When the ROW address changes, consecutive write commands
cannot be executed; it is necessary to separate the two write commands with a precharge command and a
bank-active command.
3. Different bank:
When the bank changes, the second write can be performed after an interval of no less
than 1 clock, provided that the other bank is in the bank-active state. In the case of burst write, the second
write command has priority.
WRITE to WRITE Command Interval (different bank)
Read command to Write command interval:
1. Same bank, same ROW address:
When the write command is executed at the same ROW address of
the same bank as the preceding read command, the write command can be performed after an interval of no
less than 1 clock. However, DQMB must be set High so that the output buffer becomes High-Z before data
input.
CK
Command
Din
in B3
Address
in B1
in B2
BA
ACTV
Row
Column A
WRIT
WRIT
Column B
in A0
in B0
Bank0
Active
Column =A
Write
Column =B
Write
Burst Write Mode
Burst Length = 4
Bank 0
CK
Command
Din
in B3
Address
in B1
in B2
BA
ACTV
Row 0
Row 1
ACTV
WRIT
Column A
in A0
in B0
Bank0
Active
Bank3
Active
Bank0
Write
Bank3
Write
WRIT
Column B
Burst Write Mode
Burst Length = 4
相關(guān)PDF資料
PDF描述
HB52F649E1 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM
HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM
HB52F649E1 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM)
HB52F88EM 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52F168EN 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
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