參數(shù)資料
型號(hào): HB52E649EN
廠商: Hitachi,Ltd.
英文描述: 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
中文描述: 512 MB的無(wú)緩沖SDRAM的內(nèi)存(512 MB的未緩沖同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 8/29頁(yè)
文件大?。?/td> 134K
代理商: HB52E649EN
HB52E648EN/HB52E649EN-A6B/B6B
8
Serial PD Matrix
*
1
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
0
Number of bytes used by
module manufacturer
1
0
0
0
0
0
0
0
80
128
1
Total SPD memory size
0
0
0
0
1
0
0
0
08
256 byte
2
Memory type
0
0
0
0
0
1
0
0
04
SDRAM
3
Number of row addresses
bits
0
0
0
0
1
1
0
1
0D
13
4
Number of column
addresses bits
0
0
0
0
1
0
1
0
0A
10
5
Number of banks
0
0
0
0
0
0
1
0
02
2
6
Module data width
(HB52E648EN)
0
1
0
0
0
0
0
0
40
64
(HB52E649EN)
0
1
0
0
1
0
0
0
48
72
7
Module data width
(continued)
0
0
0
0
0
0
0
0
00
0 (+)
8
Module interface signal
levels
0
0
0
0
0
0
0
1
01
LVTTL
9
SDRAM cycle time
(highest
CE
latency)
10 ns
1
0
1
0
0
0
0
0
A0
CL = 3
10
SDRAM access from Clock
(highest
CE
latency)
6 ns
0
1
1
0
0
0
0
0
60
11
Module configuration type
(HB52E648EN)
0
0
0
0
0
0
0
0
00
Non parity
(HB52E649EN)
0
0
0
0
0
0
1
0
02
ECC
12
Refresh rate/type
1
0
0
0
0
0
1
0
82
Normal
(7.8125
μ
s)
Self refresh
13
SDRAM width
0
0
0
0
1
0
0
0
08
32M
×
8
14
Error checking SDRAM width
(HB52E648EN)
0
0
0
0
0
0
0
0
00
(HB52E649EN)
0
0
0
0
1
0
0
0
08
×
8
15
SDRAM device attributes:
minimum clock delay for
back-to-back random column
addresses
0
0
0
0
0
0
0
1
01
1 CLK
16
SDRAM device attributes:
Burst lengths supported
0
0
0
0
1
1
1
1
0F
1, 2, 4, 8
相關(guān)PDF資料
PDF描述
HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
HB52E649E12-A6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12-B6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM)
HB52F169E1 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
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參數(shù)描述
HB52E649EN-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus
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