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參數(shù)資料
| 型號： | HB52E649EN |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| 中文描述： | 512 MB的無緩沖SDRAM的內(nèi)存（512 MB的未緩沖同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 20/29頁 |
| 文件大?。?/td> | 134K |
| 代理商： | HB52E649EN |
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HB52E648EN/HB52E649EN-A6B/B6B
20
DC Characteristics
(Ta = 0 to 65
°
C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V) (HB52E649EN)
HB52E649EN
-A6B/B6B
Parameter
Symbol Min
Max
Unit
Test conditions
Notes
Oper ati ng cur ent
(
CE
lat enc y = 2)
(
CE
lat enc y = 3)
I
C C 1
I
C C 1
I
C C 2 P
I
C C 2 PS
—
1125
mA
Bur s l engt h = 1
t
R C
= m n
1, 2, 3
—
1125
mA
St andby cur ent i n power down
—
54
mA
CKE = V
IL
, t
C K
= 12 ns
CKE = V
IL
, t
C K
=
∞
6
St andby cur ent i n power down
( nput si gnal stabl e)
—
36
mA
7
St andby cur ent i n non power
down
I
C C 2 N
—
360
mA
CKE,
S
= V
IH
,
t
C K
= 12 ns
CKE = V
IL
, t
C K
= 12 ns
4
Ac v e st andby cur ent in power
down
I
C C 3 P
—
72
mA
1, 2, 6
Ac v e st andby cur ent in non
power down
I
C C 3 N
—
540
mA
CKE,
S
= V
IH
,
t
C K
= 12 ns
t
C K
= m n, BL = 4
1, 2, 4
Bur s oper at ng c ur ent
(
CE
lat enc y = 2)
(
CE
lat enc y = 3)
I
C C 4
I
C C 4
I
C C 5
I
C C 6
—
1170
mA
1, 2, 5
—
1170
mA
Ref esh cur ent
—
2250
mA
t
R C
= m n
V
IH
≥
V
– 0. 2 V
V
IL
≤
0. 2 V
0
≤
Vin
≤
V
C C
0
≤
Vout
≤
V
C C
DQ = d s abl e
3
Sel ref es h curr ent
—
54
mA
8
I nput l eak age cur ent
I
L
I
L O
–10
10
μ
A
μ
A
Out put leak age cur ent
–10
10
Out put hi gh vol age
V
O H
V
O L
2. 4
—
V
I
O H
= –4 mA
I
O L
= 4 mA
Out put low vol age
Notes: 1. I
depends on output load condition when the device is selected. I
CC
(max) is specified at the
output open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CK operating current.
7. After power down mode, no CK operating current.
8. After self refresh mode set, self refresh current.
—
0. 4
V
相關PDF資料 |
PDF描述 |
|---|---|
| HB52E649E12 | THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes |
| HB52E649E12-A6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12-B6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12 | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
| HB52F169E1 | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E649EN-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E649EN-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E88EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52E89E1P-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52E89EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
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