參數(shù)資料
型號(hào): HB52E649EN
廠商: Hitachi,Ltd.
英文描述: 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
中文描述: 512 MB的無(wú)緩沖SDRAM的內(nèi)存(512 MB的未緩沖同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 2/29頁(yè)
文件大?。?/td> 134K
代理商: HB52E649EN
HB52E648EN/HB52E649EN-A6B/B6B
2
Data bus width :
×
64 Non parity (HB52E648EN)
:
×
72 ECC (HB52E649EN)
Single pulsed
RAS
4 Banks can operates simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length: 1/2/4/8
2 variations of burst sequence
Sequential
Interleave
Programmable
CE
latency
: 2/3 (HB52E648EN/52E649EN-A6B)
: 3 (HB52E648EN/52E649EN-B6B)
Byte control by DQMB
Refresh cycles: 8192 refresh cycles/64 ms
2 variations of refresh
Auto refresh
Self refresh
Ordering Information
Type No.
Frequency
CE
latency
Package
Contact pad
HB52E648EN- A6B
HB52E648EN- B6B
100 MHz
100 MHz
2/ 3
3
168- pin dual lead out soc ket ty pe
Gol d
HB52E649EN- A6B
HB52E649EN- B6B
100 MHz
100 MHz
2/ 3
3
Pin Arrangement
1 pin 10 pin11 pin
40 pin 41 pin
84 pin
85 pin 94 pin 95 pin
124 pin 125 pin
168 pin
相關(guān)PDF資料
PDF描述
HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
HB52E649E12-A6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12-B6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM)
HB52F169E1 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52E649EN-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus
HB52E649EN-B6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus
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