參數(shù)資料
型號: HB52E649EN
廠商: Hitachi,Ltd.
英文描述: 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
中文描述: 512 MB的無緩沖SDRAM的內(nèi)存(512 MB的未緩沖同步的DRAM內(nèi)存)
文件頁數(shù): 6/29頁
文件大?。?/td> 134K
代理商: HB52E649EN
HB52E648EN/HB52E649EN-A6B/B6B
6
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
34
A2
76
DQ30
118
A3
160
DQ62
35
A4
77
DQ31
119
A5
161
DQ63
36
A6
78
V
SS
CK2
120
A7
162
V
SS
CK3
37
A8
79
121
A9
163
38
A10 (AP)
80
NC
122
BA0
164
NC
39
BA1
81
WP
123
A11
165
SA0
40
V
C C
V
C C
CK0
82
SDA
124
V
C C
CK1
166
SA1
41
83
SCL
125
167
SA2
42
Not es 1. CKE1: HB52E649EN
2.
S3
: HB52E649EN
3.
S1
: HB52E649EN
84
V
C C
126
A12
168
V
C C
Pin Description
(HB52E648EN)
Pin name
Function
A0 to A12
Addr ess input
Row address
Column address
Bank sel ec addres s
A0 to A12
A0 to A9
BA0/ BA1
DQ0 to DQ63
S0
to
S3
RE
CE
W
Dat a input out put
Chi p sel ec input
Row enabl e (RAS) input
Col umn enabl e (CAS) input
Wr e enabl e input
DQMB0 t o DQMB7
By e dat a mas k
CK0 to CK3
Cl oc k i nput
CKE0, CKE1
Cl oc k enabl e input
WP
Wr e pr ot ec for ser al PD
SDA
Dat a input out put for ser al PD
SCL
Cl oc k i nput for s er al PD
SA0 to SA2
Ser al addr es s input
V
C C
V
SS
NC
Pr mary pos v e power suppl y
Gr ound
No connec on
相關(guān)PDF資料
PDF描述
HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
HB52E649E12-A6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12-B6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM)
HB52F169E1 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
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