參數(shù)資料
型號(hào): HB52E649EN
廠商: Hitachi,Ltd.
英文描述: 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
中文描述: 512 MB的無(wú)緩沖SDRAM的內(nèi)存(512 MB的未緩沖同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 14/29頁(yè)
文件大小: 134K
代理商: HB52E649EN
HB52E648EN/HB52E649EN-A6B/B6B
14
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Vol age on any p n rel at ve to V
SS
V
T
–0. 5 to V
+ 0. 5
(
4. 6 (max
V
1
Suppl y vol age rel at v e to V
SS
Shor c c ui out put cur ent
V
C C
I out
–0. 5 to +4. 6
V
1
50
mA
Power di s s pat on (HB52E648EN)
P
T
P
T
Topr
8. 0
W
Power di s s pat on (HB52E649EN)
9. 0
W
Oper ati ng temperat ur e
0 to +65
°
C
°
C
St or age temper atur e
Not e: 1. Res pect to V
SS
Ts g
–55 to +125
DC Operating Conditions
(Ta = 0 to +65
°
C)
Parameter
Symbol
Min
Max
Unit
Notes
Suppl y vol age
V
C C
V
SS
V
IH
V
IL
3. 0
3. 6
V
1, 2
0
0
V
3
I nput hi gh vol age
2. 0
V
C C
+ 0. 3
0. 8
V
1, 4
I nput l ow vol age
Not es 1. Al vol age ref er ed to V
SS
2. The suppl y vol age w h all V
C C
pi ns mus be on the same l ev el
3. The suppl y vol age w h al V
SS
pi ns mus be on the same l ev el
4. V
IH
(max = V
C C
+ 2. 0 V for puls e w h
3 ns at V
C C
.
5. V
IL
(mi n) = V
SS
– 2. 0 V for puls e w dt h
3 ns at V
SS
.
–0. 3
V
1, 5
相關(guān)PDF資料
PDF描述
HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
HB52E649E12-A6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12-B6B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52E649E12 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM)
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