參數(shù)資料
型號： GS816236
廠商： GSI TECHNOLOGY
英文描述： 16Mb（512K x 36Bit）S/DCD Sync Burst SRAM(16M位（512K x 36位）可選單/雙循環(huán)取消同步?jīng)_靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
中文描述： 16Mb的（為512k × 36Bit）的S /雙氰胺同步突發(fā)靜態(tài)存儲器（1,600位（為512k × 36位）可選單/雙循環(huán)取消同步?jīng)_靜態(tài)隨機(jī)存儲器（帶2位脈沖地址計數(shù)器））
文件頁數(shù)： 38/38頁
文件大小： 826K
代理商： GS816236
Rev: 2.10 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
38/38
1999, Giga Semiconductor, Inc.
Preliminary
GS816218/36/72B-225/200/180/166/150/133
0.18u 16M Sync SRAM Data Sheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
GS816218B-150IB 1.00 9/
1999A;GS816218B-150IB
2.00 1/1999B
Content
Converted from 0.25u 3.3V process to 0.18u 2.5V process.
Master File Rev B
Added x72 Pinout.
Added GSI Logo.
Changed BGA package drawing for 209 pin package.
GS816218B 2.01 1/
2000C;GS816218 B 2.02 1/
2000D
GS18/362.0 1/2000DGS18/
362.03 2/2000E
Front page; Features - changed 2.5V I/O supply to 2.5V
or3.3V I/O supply; Core and Interface voltages - Changed
paragraph to include information for 3.3V;Completeness
Absolute Maximum Ratings; Changed VDDQ - Value: From: -
.05 to VDD : to : -.05 to 3.6; Completeness.
Recommended Operating Conditions;Changed: I/O Supply
Voltage- Max. from VDD to 3.6; Input High Voltage- Max. from
VDD +0.3 to 3.6; Same page - took out Note 1;Completeness
Electrical Characteristics - Added second Output High Voltage
line to table; completeness.
Note: There was not a Rev 2.02 for the 8160Z or the 8161Z.
Updated pad out and pin description table (7D changed from
NC to GW)
GS18/362.03 2/2000E;
816218_r2_04
Content
816218_r2_04;
816218_r2_05
Content
Updated BGA pin description table to comply with JEDEC
standards
816218_r2_05;
816218_r2_06
Content
Changed the value of ZZ recovery in the AC Electrical
Characteristics table on page 19 from 20 ns to 100 ns
816218_r2_06;
816218_r2_07
Content/Format
Added 225 MHz speed bin
Updated numbers in page 1 table, AC Characteristics table,
and Operating Currents table
Updated format to comply with Technical Publications
standards
Changed V
SSQ
references to V
SS
Changed K4 and K8 in 209-bump BGA to NC
Updated Capitance table—removed Input row and changed
Output row to I/O
Updated numbers for Clock to Output Valid (PL) and Clock to
Output Valid (FT) for 166 MHz and 133 MHz on AC Electrical
Characteristics table
Updated Features list on page 1
Completely reworked table on page 1
Updated Mode Pin Functions table on page 9
816218_r2_07;
816218_r2_08
Content
816218_r2_08;
816218_r2_09
Content
816218_r2_09;
816218_r2_10
Content
相關(guān)PDF資料
PDF描述
GS816272 16Mb（256K x 72Bit）S/DCD Sync Burst SRAM(16M位（256K x 72位）可選單/雙循環(huán)取消同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
GS8162Z18BGB-200I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z18BB 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z18BB-150 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z18BB-150I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816236BB-150 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 512KX36 7.5NS/3.8NS 119FBGA - Trays
GS816236BB-150I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 512KX36 7.5NS/3.8NS 119FBGA - Trays
GS816236BB-150IV 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 119FPBGA - Trays
GS816236BB-150V 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 119FPBGA - Trays
GS816236BB-200 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 512KX36 6.5NS/3NS 119FBGA - Trays
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