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參數(shù)資料
| 型號(hào)： | GS816136CGD-250T |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 512K X 36 CACHE SRAM, 5.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1 MM PITCH, FBGA-165 |
| 文件頁(yè)數(shù)： | 2/29頁(yè) |
| 文件大?。?/td> | 797K |
| 代理商： | GS816136CGD-250T |
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GS816118/36CD-333/300/250
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
10/29
2004, GSI Technology
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
WR
R
W
R
X
CR
R
CW
CR
W
CW
W
CW
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a deselect cycle. Dummy read cycles increment the address counter just like normal read cycles.
3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS816136D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816136D) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816136D-133 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:165 Bump BGA?x18 Commom I/O?Top View (Package D) |
| GS816136D-133I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:165 Bump BGA?x18 Commom I/O?Top View (Package D) |
| GS816136D-150 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:165 Bump BGA?x18 Commom I/O?Top View (Package D) |
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