參數(shù)資料
型號: EP7211-CP-A
廠商: CRYSTAL SEMICONDUCTOR CORP
元件分類: 外設(shè)及接口
英文描述: HIGH-PERFORMANCE ULTRA-LOW-POWER SYSTEM-ON-CHIP WITH LCD CONTROLLER
中文描述: MULTIFUNCTION PERIPHERAL, PBGA256
封裝: PLASTIC, BGA-256
文件頁數(shù): 133/166頁
文件大?。?/td> 2623K
代理商: EP7211-CP-A
EP7211
High-Performance Ultra-Low-Power System-on-Chip with LCD Controller
133
Electrical Specifications
DS352PP3
JUL 2001
NOTE:
All power dissipation values can be derived from taking the particular IDD current and multiplying by
2.5 V.
The RTC of the EP7211 should be brought up at room temperature. This is required because the RTC
OSC will NOT function properly if it is brought up at
40
°
C. Once operational, it will continue to oper-
ate down to
40
°
C
.
A typical design will provide 3.3 V to the I/O supply (i.e., VDDIO), and 2.5 V to the remaining logic.
This is to allow the I/O to be compatible with 3.3 V powered external logic (e.g., 3.3 V DRAMs).
Pull-up current = 50 μA typical at V
DD
= 3.3 volts.
IIN
Input leakage current
1
μA
VIN = V
DD
or GND
IOZ
Output tri-state leakage current*
25
100
μA
VOUT = V
DD
or GND
CIN
Input capacitance
8
10
pF
COUT
Output capacitance
8
10
pF
CI/O
Transceiver capacitance
8
10
pF
IDD
startup
Startup current consumption
μA
Initial 100 ms from power up, 32
kHz oscillator not stable, POR
signal at VIL, all other I/O static,
VIH = V
DD
± 0.1 V, VIL = GND ±
0.1 V
IDD
standby
Standby current consumption
4
μA
Just 32 kHz oscillator running,
all other I/O static, VIH = V
DD
±
0.1 V, VIL = GND ± 0.1 V
IDD
idle
Idle current consumption
At 13 MHz
At 18 MHz
At 36 MHz
4.2
6
12
mA
Both oscillators running, CPU
static, LCD refresh active, VIH =
V
DD
± 0.1 V, VIL = GND ± 0.1 V
IDD
operating
Operating current consumption
At 13 MHz
At 18 MHz
At 36 MHz
At 49 MHz
At 74 MHz
14
20
40
50
68
mA
All system active, running typi-
cal program
V
DDstandby
Standby supply voltage
TBD
V
Minimum standby voltage for
state retention and RTC opera-
tion only
Table 6-1. DC Characteristics
(cont.)
Symbol
Parameter
Min
Max
Unit
Conditions
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