型號 廠商 描述
tc58a040f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 4 MBIT (4M x 1BITS) CMOS AUDIO NAND E2PROM
tc58dvg02a1ft00
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
tc58dvm92a1fti0
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
tc58f1001p-15
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 131,072 WORD x 8 BIT CMOS FLASH E2PROM
tc58f1001f-15
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3126; No. of Contacts:8; Connector Shell Size:16; Connecting Termination:Crimp; Circular Shell Style:Straight Plug RoHS Compliant: No
tc58f1001f-20
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3126; No. of Contacts:11; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight RoHS Compliant: No
tc58f1001p-20
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 131,072 WORD x 8 BIT CMOS FLASH E2PROM
tc58f1001p
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 131,072 WORD x 8 BIT CMOS FLASH E2PROM
tc58fvb160aft-70
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY
tc58fvb160ft
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 16 MBIT CMOS FLASH MEMORY
tc58fvb160aft-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY
tc58fvb160af
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY
tc58fvb160ft-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY
tc58fvb160ft-12
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY
tc58fvb160ft-85
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY
tc58fvb641
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
tc58fvb641ft
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
tc58fvb641ft-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
tc58fvb641ft-70
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
tc58fvb641xb-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
tc58fvb641xb-70
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
tc58fvb641ftxb-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
tc58fvb641ftxb-70
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
tc58fvm5t2aft65
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation Ring Tongue Solderless Terminal; Wire Size (AWG):16-14; Stud Size:#6; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No
tc58fvm5b2aft65
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
tc58fvm5b2axb65
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
tc58fvm5b3aft65
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
tc58fvm5b3axb65
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation Ring Tongue Solderless Terminal; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No
tc58fvm5t2axb65
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
tc58fvm5t3aft65
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation Ring Tongue Solderless Terminal; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No
tc58fvm5t3axb65
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
tc58fvm6t2aft65
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
tc58fvm6t2axb65
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
tc58fvm62a
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
tc58fvm6b2aft65
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
tc58fvm6b2axb65
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
tc58fvm7b2
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
tc58fvm7t2aft
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
tc58fvm7t2aft65
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
tc58fvm7b2aft
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
tc58fvm7b2aft80
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
tc58fvt004
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 4M (512K x 8) BIT CMOS FLASH MEMORY
tc58fvb004ft-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 4M (512K x 8) BIT CMOS FLASH MEMORY
tc58fvb004ft-12
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation Shielding Gasket; Conductive Surface:CuNi; Gasket Style:D-Shaped; Surface Resistivity/Lin:0.010"; Body Material:nickel plate over copper substrate; Length:24"; Mounting Type:Adhesive; Thickness:0.125"; Width:0.187"
tc58fvb004ft-85
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 4M (512K x 8) BIT CMOS FLASH MEMORY
tc58fvt004-12
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 4M (512K x 8) BIT CMOS FLASH MEMORY
tc58fvt004-85
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 4M (512K x 8) BIT CMOS FLASH MEMORY
tc58fvt004-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation 4M (512K x 8) BIT CMOS FLASH MEMORY
tc58fvt160axb-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation MS3106B20-21S
tc58fvb160axb-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Toshiba Corporation TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS