參數(shù)資料
型號(hào)： TC58FVM7T2AFT65
廠商： Toshiba Corporation
英文描述： 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
中文描述： 128兆位（1,600 x 8位/ 8米× 16位）的CMOS閃存
文件頁數(shù)： 1/68頁
文件大?。?/td> 649K
代理商： TC58FVM7T2AFT65
TC58FVM7(T/B)2AFT(65/80)
2002-10-24 1/68
Access Time (Random/Page)
TC58FVM7T2A/B2AFT65
TC58FVM7T2A/B2AFT80
V
DD
CL
=
30 pF CL
=
100 pF CL
=
30 pF CL
=
100 pF
2.7~3.6V
65 ns/25 ns
70 ns/30 ns
80 ns/30 ns
85 ns/35 ns
2.3~3.6V
70 ns/30 ns
75 ns/35 ns
85 ns/35 ns
90 ns/40 ns
Power consumption
10
μ
A (Standby)
15 mA (Program/Erase operation)
55 mA (Random Read operation)
11 mA (Address Increment Read operation)
5 mA (Page Read operation)
Package
TSOP
56-P-1420-0.50A (weight: 0.61g)
128-MBIT (16M
×
8 BITS / 8M
×
16 BITS) CMOS FLASH MEMORY
DESCRIPTION
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash
memory organized as 16777216 words
×
8 bits or as 8388608 words
×
16 bits. The TC58FVM7T2A/B2A features
commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands
are based on the J EDEC standard. The Program and Erase operations are automatically executed in the chip. The
TC58FVM7T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or
Erase operation.
FEATURES
Power supply voltage
V
DD
=
2.3 V~3.6 V
Operating temperature
Ta
=
40
°
C~85
°
C
Organization
16M
×
8 bits/8M
×
16 bits
Functions
Simultaneous Read/Write
Page Read
Auto Program, Auto Page Program
Auto Block Erase, Auto Chip Erase
Fast Program Mode / Acceleration Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling/Toggle bit
block protection, boot block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
Block erase architecture
8
×
8 Kbytes/255
×
64 Kbytes
Boot block architecture
TC58FVM7T2A: top boot block
TC58FVM7B2A: bottom boot block
Mode control
Compatible with J EDEC standard commands
Erase/Program cycles
10
5
cycles typ.
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